Maker : ETC
Part No. : E13007F2

  Datasheet PDF : E13007F2.pdf
  Cross Reference : E13007F2 Cross Reference
  Buy Component : E13007F2 Find Stock and Price

Shortcut : E13007F2 

Product Information

www.DataSheet4U.com KSE13007F KSE13007F High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB PC TJ TSTG Parameter Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 8 16 4 40 150 - 65 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO IEBO hFE VCE(sat) Parameter Collector-Base Breakdown Voltage Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V , f = 0.1MHz VCE = 10V, IC = 0.5A VCC =125V, IC = 5A IB1 = - IB2 = 1A RL = 50Ω 4 1.6 3 0.7 110 8 5 Min. 400 Typ. Max. 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz µs µs µs Units V mA VBE(sat) Cob fT tON tSTG tF Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, June 2002 www.DataSheet4U.com KSE13007F Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 10 VCE = 5V IC = 3 IB hFE, DC CURRENT GAIN 1 VBE(sat) 10 0.1 V CE(sat) 1 0.1 1 10 0.01 0.1 1 10 100 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 1000 Cob[pF], CAPACITANCE tR, tD [µ s], TURN ON TIME 100 tR 100 10 tD, V BE(off)=5V VCC =125V IC =5IB 1 0.1 10 0.1 1 10 1 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn On Time 10000 100 tSTG, tF [µs], TURN OFF TIME VCC =125V IC =5IB IC[A], COLLECTOR CURRENT tSTG 1000 10 µs 10 s 0µ 10 s 1m DC 1 100 tF 0.1 10 0.1 1 10 0.01 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Turn Off Time Figure 6. Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. A2, June 2002 www.DataSheet4U.com KSE13007F Typical Characteristics (Continued) 60 50 PC[W], POWER DISSIPATION 40 30 20 10 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A2, June 2002 www.DataSheet4U.com KSE13007F Package Demensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 0° ) 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, June 2002 15.87 ±0.20 www.DataSheet4U.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet series™ FAST® DISCLAIMER FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FUR...

Link URL