Maker : STMicroelectronics
Part No. : E180NE10

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www.DataSheet4U.com ® STE180NE10 N-CHANNEL 100V - 4.5 mΩ - 180A ISOTOP STripFET™ POWER MOSFET TYPE STE180NE10 s s s s s V DSS 100 V R DS(on) < 6 mΩ ID 180 A TYPICAL RDS(on) = 4.5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM (•) P tot V ISO T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (AC-RMS) Storage T emperature Max. Operating Junction Temperature o o o Value 100 100 ± 20 180 119 540 360 2.88 2500 -55 to 150 150 ( 1) ISD ≤180 Α, di/dτ ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V o o C C 1/8 (•) Pulse width limited by safe operating area November 1999 www.DataSheet4U.com STE180NE10 THERMAL DATA R thj -case R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With conductive Grease Applied Max Max 0.347 0.05 o o C/W C/W AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 25 V) Max Value 60 720 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage I D = 1 mA Test Con ditions VGS = 0 Min. 100 4 40 ± 400 Typ. Max. Unit V µA µA nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V T c = 125 oC ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10 V Test Con ditions ID = 1 mA I D = 90 A 180 Min. 2 Typ. 3 4.5 Max. 4 6 Unit V mΩ A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s (∗) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D = 80 A V GS = 0 Min. 30 21 2.5 0.9 Typ. Max. Unit S nF nF nF 2/8 www.DataSheet4U.com STE180NE10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 50 V I D = 90 A R G = 4.7 Ω V GS = 10 V (Resistive Load, see fig. 3) V DD = 80 V ID = 180 A V GS = 10 V Min. Typ. 35 100 142 37 60 185 Max. Unit ns ns nC nC nC SWITCHING OFF Symbo l t d(on) tr tr (Voff) tf tc Parameter Turn-off Delay T ime Fall T ime Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions V DD = 50 V I D = 90 A V GS = 10 V R G = 4.7 Ω (Resistive Load, see fig. 3) V DD = 80 V I D = 180 A V GS = 10 V R G = 4.7 Ω (Induct ive Load, see fig. 5) Min. Typ. 110 100 100 50 92 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 180 A V GS = 0 170 850 10 I SD = 180 A di/dt = 100 A/µs T j = 150 o C V DD = 50 V (see test circuit, fig. 5) Test Con ditions Min. Typ. Max. 180 540 1.5 Unit A...

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