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Search -----> FFPF05U120SMaker : Fairchild Semiconductor
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FFPF05U120S FFPF05U120S Features • High voltage and high reliability • High speed switching • Low forward voltage www.DataSheet4U.com Applications • • • • General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuits TO-220F 1 2 1. Cathode 2. Anode ULTRA FAST RECOVERY POWER RECTIFIER Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM TJ, TSTG TC=25°C unless otherwise noted ° Value 1200 @ TC = 100°C 5 30 - 65 to +150 Units V A A °C Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case TC=25 °C unless otherwise noted Min. TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C 1.0 Typ. Max. 3.5 3.2 µA 5 600 100 7 280 ns A nC mJ Units V Value 3.4 Units °C/W Electrical Characteristics Symbol V FM * Parameter Maximum Instantaneous Forward Voltage I F = 5A I F = 5A Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (IF =5A, di/dt = 200A/µs) IRM * trr Irr Qrr WAVL Avalanche Energy * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2000 Fairchild Semiconductor International Rev. F, September 2000 FFPF05U120S Typical Characteristics 30 1000 [ µ A] Forward Current , IF [A] 10 100 TC = 100 C o TC = 100 C 10 o Reverse Current , I R 1 1 TC = 25 C o TC = 25 C 0.1 o 0.01 0.1 0 www.DataSheet4U.com 1 2 3 4 5 0.001 0 200 400 600 800 1000 1200 Forward Voltage , VF [V] Reverse Voltage , VR [V] Figure 1. Typical Forward Voltage Drop vs. Forward Current 100 100 Figure 2. Typical Reverse Current vs. Reverse Voltage Capacitance , Cj [pF] 75 Reverse Recovery Time , trr [ns] Typical Capacitance at 0V = 87 pF V R = 200V IF = 5A 80 o TC = 100 C 60 50 25 TC = 25 C 40 o 0.1 1 10 100 100 500 Reverse Voltage , VR [V] di/dt [A/µ s] Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time vs. di/dt 8 7 6 5 Reverse Recovery Current , Irr [A] 11 10 9 8 7 6 5 4 3 2 1 0 100 V R = 200V IF = 5A T C = 100 C o Average Forward Current , I F(AV) [A] 12 C D 4 3 2 1 0 60 TC = 25 C o 500 80 100 120 o 140 160 di/dt [A/ µ s] Case Temperature , TC [ C] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2000 Fairchild Semiconductor International Figure 6. Forward Current Derating Curve Rev. F, September 2000 FFPF05U120S Package Dimensions TO-220F 2L 10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (0.70) 3.30 ±0.10 www.DataSheet4U.com 6.68 ±0.20 15.80 ±0.20 (1.00x45°) (6.50) (1.80) 9.75 ±0.30 12.00 ±0.20 MAX1.47 0.80 ±0.10 2.76 ±0.20 0.35 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 9.40 ±0.20 4.70 ±0.20 15.87 ±0.20 Dimensions in Millimeters Rev. F, September 2000 ©2000 Fairchild Semiconductor International TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST® www.DataSheet4U.com DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FA... |
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