Maker : Fairchild Semiconductor
Part No. : F10F150S

  Datasheet PDF : F10F150S.pdf
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Product Information

FFPF10F150S FFPF10F150S Features • High voltage and high reliability • High speed switching www.DataSheet4U.com • Low forward voltage Applications • Suitable for damper diode in horizontal deflection circuits 1 2 TO-220F 1. Cathode 2. Anode DAMPER DIODE Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM TJ, TSTG TC=25°C unless otherwise noted ° Value 1500 @ TC = 125°C 10 100 - 65 to +150 Units V A A °C Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case TC=25 °C unless otherwise noted Min. TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Typ. Max. 1.6 1.4 µA 10 80 170 250 14 ns ns V Units V Value 3.0 Units °C/W Electrical Characteristics Symbol V FM * Parameter Maximum Instantaneous Forward Voltage I F = 10A I F = 10A Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time (IF =1A, di/dt = 50A/µs) Maximum Forward Recovery Time (IF =6.5A, di/dt = 50A/µs) Voltage IRM * trr tfr Maximum Forward Recovery VFRM * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2000 Fairchild Semiconductor International Rev. F, September 2000 FFPF10F150S Typical Characteristics 100 100 Forward Current , I F [A] [ µA] 10 Reverse Current , I 10 TJ = 125 C 1 o o TJ = 125 C 1 o o R 0.1 TJ = 100 C o TJ = 25 C 0.01 TJ = 25 C www.DataSheet4U.com 0.1 0.0 0.001 0.4 0.8 1.2 1.6 2.0 0 300 600 900 1200 1500 Forward Voltage , VF [V] Reverse Voltage , VR [V] Figure 1. Typical Forward Voltage Drop vs. Forward Current 200 180 160 400 Figure 2. Typical Reverse Current vs. Reverse Voltage [ns] 300 rr Typical Capacitance at 0V = 150 pF Capacitance , Cj [pF] 140 120 100 80 60 40 20 0 0.1 1 10 100 Reverse Recovery Time , t di/dt = 50A/µs 200 di/dt = 100A/µs 100 0 1 2 3 4 5 6 7 8 9 10 Reverse Voltage , VR [V] Forward Current , IF [A] Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time vs. Forward Current 15 [nC] Stored Recovery Charge , Q 1500 Average Forward Current , I di/dt = 100A/µs rr F(AV) [A] 2000 10 C D 1000 di/dt = 50A/µs 5 500 0 1 2 3 4 5 6 7 8 9 10 0 80 100 120 o 140 160 Forward Current , IF [A] Case Temperature , TC [ C] Figure 5. Typical Stored Charge vs. Forward Current ©2000 Fairchild Semiconductor International Figure 6. Forward Current Derating Curve Rev. F, September 2000 FFPF10F150S Package Dimensions TO-220F 2L 10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (0.70) www.DataSheet4U.com 6.68 ±0.20 3.30 ±0.10 15.80 ±0.20 (1.00x45°) (6.50) (1.80) 9.75 ±0.30 12.00 ±0.20 MAX1.47 0.80 ±0.10 2.76 ±0.20 0.35 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 9.40 ±0.20 4.70 ±0.20 15.87 ±0.20 Dimensions in Millimeters Rev. F, September 2000 ©2000 Fairchild Semiconductor International TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ www.DataSheet4U.com FAST® DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT ...

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