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Search -----. FFPF10U20SMaker : Fairchild Semiconductor
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www.DataSheet.co.kr FFPF10U20S FFPF10U20S Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F 1 2 1. Cathode 2. Anode ULTRA FAST RECOVERY POWER RECTIFIER Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM TJ, TSTG TC=25°C unless otherwise noted ° Value 200 @ TC = 100°C 10 100 - 65 to +150 Units V A A °C Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case TC=25 °C unless otherwise noted Min. TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C 0.5 Typ. Max. 1.2 1.0 µA 10 100 35 2.5 45 ns A nC mJ Units V Value 5.0 Units °C/W Electrical Characteristics Symbol V FM * Parameter Maximum Instantaneous Forward Voltage I F = 10A I F = 10A Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (IF =10A, di/dt = 200A/µs) IRM * trr Irr Qrr WAVL Avalanche Energy * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2000 Fairchild Semiconductor International Rev. F, September 2000 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FFPF10U20S Typical Characteristics 50 1000 [µA] 100 Forward Current , IF [A] 10 TC = 100 C TC = 25 C o o TC = 100 C 10 o Reverse Current , I R 1 TC = 25 C 0.1 o 1 0.01 0.1 0.0 0.001 0.5 1.0 1.5 2.0 0 50 100 150 200 Forward Voltage , VF [V] Reverse Voltage , VR [V] Figure 1. Typical Forward Voltage Drop vs. Forward Current 400 40 Figure 2. Typical Reverse Current vs. Reverse Voltage Reverse Recovery Time , trr [ns] Typical Capacitance at 0V = 286 pF IF = 10A Tc = 25 C 35 o Capacitance , Cj [pF] 300 200 30 100 25 0.1 1 10 100 20 100 500 Reverse Voltage , VR [V] di/dt [A/ µs] Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time vs. di/dt 16 14 12 10 Reverse Recovery Current , rr [A] I 5 IF = 10A o TC = 25 C 4 Average Forward Current , I F(AV) [A] 6 C D 3 8 6 4 2 0 60 2 1 0 100 500 80 100 120 o 140 160 di/dt [A/µ s] Case Temperature , TC [ C] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2000 Fairchild Semiconductor International Figure 6. Forward Current Derating Curve Rev. F, September 2000 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FFPF10U20S Package Dimensions TO-220F 2L 10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20 (0.70) 3.30 ±0.10 6.68 ±0.20 15.80 ±0.20 (1.00x45°) (6.50) (1.80) 9.75 ±0.30 12.00 ±0.20 MAX1.47 0.80 ±0.10 2.76 ±0.20 0.35 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 9.40 ±0.20 4.70 ±0.20 15.87 ±0.20 Dimensions in Millimeters Rev. F, September 2000 ©2000 Fairchild Semiconductor International Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST® DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS O... |
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