Maker : Fairchild Semiconductor
Part No. : FDS5672

Datasheet PDF : FDS5672.pdf
Cross Reference : FDS5672 Cross Reference
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Shortcut : FDS5670  FDS5672 

Product Information

www.DataSheet4U.com FDS5672 N-Channel PowerTrench® MOSFET July 2005 FDS5672 N-Channel PowerTrench® MOSFET 60V, 12A, 10mΩ Features rDS(ON) = 10mΩ VGS = 10V, ID = 12A , rDS(ON) = 14mΩ VGS = 6V, ID = 10A , High performance trench technology for extremely low rDS(ON) Low gate charge High power and current handling capability General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications DC/DC converters Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 ©2005 Fairchild Semiconductor Corporation FDS5672 Rev. A 1 www.fairchildsemi.com www.DataSheet4U.com FDS5672 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25 oC, VGS = 10V, RθJA = 50oC/W) Continuous (TC = 25 C, VGS = 6V, RθJA = 50 C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature o o Ratings 60 ±20 12 10 Figure 4 245 2.5 20 -55 to 150 Units V V A A mJ W mW/oC o C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case (Note 2) Thermal Resistance Junction to Ambient at 10 seconds (Note 3) Thermal Resistance Junction to Ambient at 1000 seconds (Note 3) 25 50 85 oC/W oC/W o C/W Package Marking and Ordering Information Device Marking FDS5672 Device FDS5672 Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 50V VGS = 0V VGS = ±20V TC = 150oC 60 1 250 ±100 V µA nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ID = 12A, VGS = 10V rDS(ON) Drain to Source On Resistance ID = 10A, VGS = 6V, ID = 12A, VGS = 10V, TC = 150oC 2 0.0088 0.012 0.016 4 0.010 0.014 0.023 Ω V Dynamic Characteristics CISS COSS CRSS RG Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 2V VDD = 30V ID = 12A Ig = 1.0mA 2200 410 130 1.4 34 4.2 9.4 5.2 9.3 45 5.5 pF pF pF Ω nC nC nC nC nC ©2005 Fairchild Semiconductor Corporation FDS5672 Rev. A 2 www.fairchildsemi.com www.DataSheet4U.com FDS5672 N-Channel PowerTrench® MOSFET Resistive Switching Characteristics (VGS = 10V) tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 30V, ID = 12A VGS = 10V, RGS = 9.1Ω 13 20 35 14 50 64 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 12A ISD = 6A ISD=12A, dISD/dt = 100A/µs ISD=12A, dISD/dt = 100A/µs 1.25 1.0 39 40 V V ns nC Notes: 1: Starting TJ = 25°C, L = 1mH, IAS = 22A, VDD = 60V, VGS = 10V. 2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 3: RθJA is measured with 1.0 in2 copper on FR-4 board. ©2005 Fairchild Semiconductor Corporation FDS5672 Rev. A 3 www.fairchildsemi.com www.DataSheet4U.com FDS5672 N-Channel PowerTrench® MOSFET Typical Characteristics TC = 25°C unless otherwise noted 1.2 15 POWER DISSIPATION MULTIPLIER 1...

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