Maker : Infineon
Part No. : G03H1202

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www.DataSheet4U.com IGA03N120H2 HighSpeed 2-Technology C • • Designed for: - TV – Horizontal Line Deflection 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Gate-Control G E P-TO220-3-31 (FullPAK) P-TO220-3-34 (FullPAK) • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGA03N120H2 IGA03N120H2 VCE 1200V 1200V IC 3A 3A Eoff 0.15mJ 0.15mJ Tj,max 150°C 150°C Marking G03H1202 G03H1202 Package P-TO-220-3-31 P-TO-220-3-34 Ordering Code Q67040-S4648 Q67040-S4654 Maximum Ratings Parameter Collector-emitter voltage TC = 100°C, f = 32kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 °C VGE Ptot ±20 29 V W ICpuls Triangular collector peak current (VGS = 15V) Symbol Value 1200 8.2 9 9 Unit V A DataShee DataSheet4U.comV C E ICpk DataSheet4U.com Power Semiconductors DataSheet 4 U .com 1 Mar-04, Rev. 2.0 www.DataSheet4U.com IGA03N120H2 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient RthJA P-TO-220-3-31 P-TO-220-3-34 64 RthJC 4.3 K/W Symbol Conditions Max. Value Unit Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 30 0µA VCE(sat) V G E = 15V, I C = 3A T j = 25° C T j = 15 0° C V G E = 10V, I C = 3A , T j = 25° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) I C = 90µA ,V C E =V G E T j = 25° C T j = 15 0° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E = 25V V G E = 0V f= 1 M Hz V C C = 9 60V, I C = 3A V G E = 1 5V P -T O - 2 20- 3- 31 7 nH 205 24 7 8.6 nC pF IGES gfs V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 3A I C E S DataSheet4U.com V G E = 0V V C E = 1200V, 2 20 80 100 nA S 2.1 2.2 2.5 2.4 3 2.8 3.9 µA 1200 V Symbol Conditions Value min. Typ. max. Unit et4U.com DataShee DataSheet4U.com Power Semiconductors DataSheet 4 U .com 2 Mar-04, Rev. 2.0 www.DataSheet4U.com IGA03N120H2 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25° C V C C = 8 00V, I C = 3A V G E = 0V/ 15V R G = 8 2Ω 1) L σ = 180nH 1) C σ = 4 0 pF Energy losses include “tail” and diode 2) reverse recovery. 9.2 5.2 281 29 0.14 0.15 0.29 mJ ns Symbol Conditions Value min. Typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 15 0° C V C C = 8 00V, I C = 3A V G E = 0V/ 15V L σ 1 ) = 180nH C σ 1 ) = 4 0 pF Energy losses include “tail” and diode2) reverse recovery. G Symbol Conditions Value min. Typ. 9.4 6.7 340 63 0.22 0.26 0.48 max. - Unit ns et4U.com DataShee DataSheet4U.com R = 8 2Ω mJ Switching Energy ZVT, Inductive Load Parameter IGBT Characteristic Turn-off energy Eoff V C C = 8 00V, I C = 3A V G E = 0V/ 15V R G = 8 2Ω , C r 1 ) = 4nF T j = 25° C T j = 15 0° C 0.05 0.09 mJ Symbol Conditions Value min. typ. max. Unit 1) DataSheet4U.com Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in fi...

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