Maker : Hittite Microwave Corporation
Part No. : HMC818LP4E

  Datasheet PDF : HMC818LP4E.pdf
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www.DataSheet4U.com v00.1108 HMC818LP4E GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Features Low Noise Figure: 0.85 dB High Gain: 20.5 dB High OIP3: +35 dBm Single Supply: +3V to +5V 50 Ohm Matched Input/Output 24 Lead 4x4mm QFN Package: 16mm2 8 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC818LP4E is ideal for: • Cellular/3G and LTE/WiMAX/4G • BTS & Infrastructure • Repeaters and Femtocells • Public Safety Radios Functional Diagram General Description The HMC818LP4E is a GaAs PHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.7 - 2.2 GHz. The amplifier has been optimized to provide 0.85 dB noise figure, 20.5 dB gain and +35 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC818LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for a specific application. Electrical Specifi cations, TA = +25° C, Rbias = 10K, Vdd= Vdd1, 2, 3, 4, Idd = Idd1 + Idd2, Idd3 + Idd4 Vdd = 3V Parameter Min. Frequency Range Gain Gain Variation Over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 30 15 Typ. 1700 - 2000 18 0.010 0.95 18 16 14 15 24.5 42 55 30 1.2 14 Max. Min. Typ. 2000 - 2200 16.5 0.008 0.95 17 15 15 16 25 42 55 78 1.2 17 Max. Min. Typ. 1700 - 2000 20.5 0.015 0.85 21 15 19 20 33 112 146 78 1.1 15.5 Max. Min. Typ. Max. MHz dB dB/°C 1.1 dB dB dB dBm dBm dBm 146 mA 2000 - 2200 17.5 0.012 0.85 18 13 21 21.5 35 112 Vdd = 5V Units * Rbias resistor sets current, see application circuit herein 8 - 402 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com www.DataSheet4U.com HMC818LP4E v00.1108 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Broadband Gain & Return Loss [1] [2] 25 S21 Gain vs. Temperature [1] 26 24 22 GAIN (dB) 20 18 16 8 LOW NOISE AMPLIFIERS - SMT 8 - 403 15 RESPONSE (dB) 5 -5 -15 -25 S11 S22 Vdd=5V Vdd=3V 14 12 1 1.2 1.4 1.6 1.8 2 2.2 2.4 FREQUENCY (GHz) 2.6 2.8 3 1.6 1.7 1.8 +25C +85C - 40C -35 0.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Gain vs. Temperature [2] 26 24 22 GAIN (dB) 20 18 16 14 12 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Input Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25 C +85 C - 40 C +25C +85C - 40C Output Return Loss vs. Temperature [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25 C +85 C - 40 C Reverse Isolation vs. Temperature [1] 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 +25 C +85 C - 40 C [1] Vdd = 5V, Rbias = 10K [2] Vdd = 3V, Rbias = 10K For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com www.DataSheet4U.com HMC818LP4E v00.1108 GaAs SMT PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 8 LOW NOISE AMPLIFIERS - SMT Noise Figure vs Temperature [1] 1.6 1.4 +85C Output P1dB vs. Temperature 24 22 Vdd=5V NOISE FIGURE (dB) 1.2 1 0.8 0.6 -40C +25 C 20 P1dB (dBm) 18 16 Vdd=3V 0.4 0.2 0 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Vdd=5V Vdd=3V 14 12 10 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) +25 C +85 C - 40 C 2.2 2.3 Psat vs. Temperature 24 22 Vdd=5V Output IP3 vs. Temperature 38 36 34 32 IP3 (dBm) Vdd=5V +25 C +85 C - 40 C 20 Psat (dBm) 18 Vdd=3V 30 28 Vdd=3V 16 14 12 10 1.6 1....

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