Maker : ST Microelectronics
Part No. : IRF630MFP

  Datasheet PDF : IRF630MFP.pdf
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Product Information

www.DataSheet4U.com IRF630M IRF630MFP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF630M IRF630FPM s s s s VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 9A 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-220 3 1 2 1 2 3 TO-220FP DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and INTERNAL SCHEMATIC DIAGRAM improves the performances compared with standard parts from various sources. Isolated TO-220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCB’s. DataSheet4U.com .APPLICATIONS s MONITOR DISPLAYS s GENERAL PURPOSE SWITCH DataSh ee ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter IRF630M Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 9 5.7 36 75 0.6 5 -–65 to 150 150 (1)ISD ≤9A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. (**) Limited only by Maximum Temperature Allowed Value IRF630MFP 200 200 ± 20 9 (**) 5.7 (**) 36 30 0.24 5 2500 Unit V V V A A A W W/°C V/ns V °C °C (•)Pulse width limited by safe operating area October 2001 1/9 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com IRF630M / FP THERMAL DATA TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.67 62.5 300 TO-220FP 4.17 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V Min. 200 1 50 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 4.5 A Min. 2 Typ. 3 0.35 Max. 4 0.40 Unit V Ω et4U.co m DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance DataSheet4U.com Test Conditions VDS > ID(on) x RDS(on)max, ID = 4.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 3 Typ. 4 540 90 35 Max. Unit S DataSh ee 700 120 50 pF pF pF 2/9 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com IRF630M / FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 100 V, ID = 4.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 160V, ID = 9 A, VGS = 10V Min. Typ. 10 15 31 7.5 9 Max. 14 20 45 Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 160V, ID = 9 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. Typ. 12 12 25 Max. 17 17 35 Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 9 A, VGS = 0 ISD = 9 A, di/dt = 100A/µs VDataSheet4U.com DD = 50 V, T j = 150°C (see test circuit, Figure 5) 170 0.95 11 Test Conditions Min. Typ. Max. 9 36 1.5 Unit A A V ns µC A m et4U.co DataSh ee Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. ...

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