Maker : IRF
Part No. : IRFSL23N15D

Datasheet PDF : IRFSL23N15D.pdf
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Product Information

PD - 93894A SMPS MOSFET IRFB23N15D IRFS23N15D IRFSL23N15D HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 150V RDS(on) max 0.090Ω ID 23A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB23N15D and Current l D2Pak IRFS23N15D TO-262 IRFSL23N15D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 23 17 92 3.8 136 0.9 ± 30 4.1 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input DC-DC Active Clamp Reset Forward Converter Notes  through ‡ are on page 11 www.irf.com 1 6/29/00 IRFB/IRFS/IRFSL23N15D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.18 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.090 Ω VGS = 10V, ID = 14A „ 5.5 V VDS = VGS, ID = 250µA 25 VDS = 150V, VGS = 0V µA 250 VDS = 120V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 11 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 37 9.6 19 10 32 18 8.4 1200 260 65 1520 120 210 Max. Units Conditions ––– S VDS = 25V, ID = 14A 56 ID = 14A 14 nC VDS = 120V 29 VGS = 10V, „ ––– VDD = 75V ––– ID = 14A ns ––– RG = 5.1Ω ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz† ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 120V … Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 260 14 13.6 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. ––– 0.50 ––– ––– Max. 1.1 ––– 62 40 Units °C/W Diode Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton Conditions D MOSFET symbol 23 ––– ––– showing the A G integral reverse ––– ––– 92 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V „ ––– 150 220 ns TJ = 25°C, IF = 14A ––– 0.8 1.2 µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFB/IRFS/I...

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