Maker : International Rectifier
Part No. : IRG4PC50FDPBF

Datasheet PDF : IRG4PC50FDPBF.pdf
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www.DataSheet4U.com PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free C Fast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A n-cha n ne l Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 70 39 280 280 25 280 ± 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.24 ----6 (0.21) Max. 0.64 0.83 -----40 ------ Units °C/W g (oz) 04/29/04 www.DataSheet4U.com IRG4PC50FDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Collector-to-Emitter Breakdown VoltageS 600 Temperature Coeff. of Breakdown Voltage ---Collector-to-Emitter Saturation Voltage ---------Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage ---Forward Transconductance T 21 Zero Gate Voltage Collector Current ------Diode Forward Voltage Drop ------Gate-to-Emitter Leakage Current ---- Typ. ---0.62 1.45 1.79 1.53 ----14 30 ------1.3 1.2 ---- Max. Units Conditions ---V VGE = 0V, IC = 250µA ---- V/°C VGE = 0V, IC = 1.0mA 1.6 IC = 39A VGE = 15V ---V IC = 70A See Fig. 2, 5 ---IC = 39A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA ---- mV/°C VCE = VGE, IC = 250µA ---S VCE = 100V, IC = 39A 250 µA VGE = 0V, VCE = 600V 6500 VGE = 0V, VCE = 600V, TJ = 150°C 1.7 V IC = 25A See Fig. 13 1.5 IC = 25A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------Typ. 190 28 65 55 25 240 140 1.5 2.4 3.9 59 27 400 260 6.5 13 4100 250 49 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 290 IC = 39A 42 nC VCC = 400V See Fig. 8 97 VGE = 15V ---TJ = 25°C ---ns IC = 39A, VCC = 480V 360 VGE = 15V, RG = 5.0Ω 210 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 1...

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