Maker : Fairchild Semiconductor
Part No. : J107

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J105 / J106 / J107 / JFTJ105 Discrete POWER & Signal Technologies J105 J106 J107 JFTJ105 G D G S D TO-92 G SOT-223 S N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Parameter Value 25 - 25 10 -55 to +150 Units V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max J105 / J106 / J107 350 2.8 125 357 Units mW mW/°C °C/W °C/W ©1997 Fairchild Semiconductor Corporation J105 J106 J107 JFTJ105 J105 // J106 //J107 / /NDSJ105 N-Channel Switch (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage I G = - 10 µA, VDS = 0 VGS = - 15 V, VDS = 0 VGS = - 15 V, VDS = 0, TA = 100°C VDS = 15 V, ID = 10 nA J105 J106 J107 - 25 - 3.0 - 200 - 10 - 6.0 - 4.5 V nA nA V V V - 4.5 - 2.0 - 0.5 ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 VDS ≤ 0.1 V, VGS = 0 J105 J106 J107 J105 J106 J107 500 200 100 3.0 6.0 8.0 mA mA mA Ω Ω Ω rDS(on) Drain-Source On Resistance SMALL SIGNAL CHARACTERISTICS Cdg(on) Csg(on) Cdg(off) Csg(off) Drain Gate & Source Gate On Capacitance Drain-Gate Off Capacitance Source-Gate Off Capacitance VDS = 0, VGS = 10 V, f = 1.0 MHz VDS = 0, VGS = 10 V, f = 1.0 MHz VDS = 0, VGS = 10 V, f = 1.0 MHz 160 35 35 pF pF pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Typical Characteristics Common Drain-Source Characteristics 200 ID - DRAIN CURRENT (mA) ID - DRAIN CURRENT (mA) V =0 V GS -1V Common Drain-Source Characteristics 50 V =0V GS - 0.1V T A = + 25 C 0 150 40 30 TYP V = -0.7V GS(OFF) -2V - 0.2V 100 -3V 20 10 0 - 0.3V 50 -4V -5V T A = + 25 C 0 -0.4V - 0.5V TYP V = -5V GS(OFF) 0 0 0.5 1 1.5 VDS - DRAIN-SOURCE VOLTAGE(V) 2 0 1 2 3 4 VDS - DRAIN-SOURCE VOLTAGE(V) 5 J105 / J106 / J107 / JFTJ105 N-Channel Switch (continued) Typical Characteristics (continued) Parameter Interactions Ω) Capacitance vs Voltage 2,000 f=0.1-1.0MHz 200 r rDS - DRAIN "ON" RESISTANCE ( 50 20 10 5 2 V @ VDS = 5.0V, ID =3nA GS(OFF) I D- DRAIN CURRENT (mA) 100 DS 1,000 I DSS Cis (Crs) - CAPACITANCE (pf) @ VDS=100MV, VGS = 0 C 500 200 100 is (V DS = 5V) 20 10 5 C rs ( V DS = 0 V ) r DS 50 20 1 0.1 0.2 0.3 0.5 1 2 3 5 V GS - GATE CUT OFF VOLTAGE (V) 10 10 1 0 -5 -10 -15 V GS - GATE-SOURCE VOLTAGE (V) -20 --- NORMALIZED RESISTANCE Normalized Drain Resistance vs Bias Voltage ) 20 10 5 V GS(OFF) @5V, 10uA r rDS = --------------V GS 1 - ---------V On Resistance vs Drain Current r DS - DRAIN "ON" RESISTANCE ( V GS = 0 V 20 10 5 = - 3.0V GS(OFF) DSb 0 +125 C +125 C 0 0 GS(OFF) +25 C +25 C - 55 C V = - 5.0V GS(OFF) 0 0 1 0 0.2 0.4 0.6 0.8 1 V GS / VGS(OFF) NORMALIZED GATE TO SOURCE VOLTAGE (V) -0.5 r DSb 1 1 2 3 5 10 20 30 I D - DRAIN CURRENT (mA) 50 100 OUTPUT CONDUCTANCE (u mhos) - TRANSCONDUCTANCE (u mhos) Output Conductance vs Drain Current V DG = 5.0V 10V 15V 20V 10V 15V 20V 5.0V 10V 15V 20V 5.0V V Transconductance vs Drain Current V DG = 10.0V T A = +25 0 C f = 1.0 k Hz T = - 55 C A T A= +25 0 C 0 TA = +125 C 0 GS(OF...

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