Maker : ON Semiconductor
Part No. : J110

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Product Information

www.DataSheet4U.com J110 JFET − General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for general purpose audio amplifiers, analog switches and choppers. Features http://onsemi.com 1 DRAIN • • • • • • • • N−Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low RDS(on) < 18 W Fast Switching td(on) + tr = 8.0 ns (Typ) Low Noise en = 6.0 nV/√Hz @ 10 Hz (Typ) Pb−Free Packages are Available* 3 GATE 2 SOURCE MARKING DIAGRAM MAXIMUM RATINGS Rating Gate−Source Voltage Drain −Gate Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temp Range Storage Temperature Range TJ Tstg Symbol VGS VDG IG PD 310 2.82 135 −65 to +150 mW mW/°C °C °C J110 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Value −25 −25 10 Unit Vdc Vdc mAdc 1 2 3 CASE 29 TO−92 (TO−226) STYLE 5 J110 AYWW G G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION Device J110 J110G J110RLRA J110RLRAG Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping † 1000 Units / Box 1000 Units / Box 2000 / Tape & Reel 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 1 November, 2005 − Rev. 6 Publication Order Number: J110/D J110 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic STATIC CHARACTERISTICS Gate −Source Breakdown Voltage Gate Reverse Current Gate−Source Cutoff Voltage Drain Source On−Resistance Zero−Gate−Voltage Drain Current (Note 1) DYNAMIC CHARACTERISTICS Drain−Gate and Source−Gate On−Capacitance (VDS = VGS = 0, f = 1.0 MHz) Drain−Gate Off−Capacitance Source−Gate Off−Capacitance 1. Pulse Width = 300 ms, Duty Cycle = 3.0%. (VGS = −10 Vdc, f = 1.0 MHz) (VGS = −10 Vdc, f = 1.0 MHz) Cdg(on) + Csg(on) Cdg(off) Csg(off) − 85 pF (IG = −1.0 mAdc) (VGS = −15 Vdc, VDS = 0) (VGS = −15 Vdc, VDS = 0, TA = 100°C) (VDS = 5.0 Vdc, ID = 1.0 mAdc) (VDS v 0.1 V, VGS = 0 V) (VDS = 15 Vdc) V(BR)GSS IGSS VGS(off) RDS(on) IDSS −25 − − −0.5 − 10 − −3.0 −200 −4.0 18 − Vdc nAdc Vdc W mAdc Symbol Min Max Unit − − 15 15 pF pF Crss, FEEDBACK CAPACITANCE (pF) 100 Ciss, INPUT CAPACITANCE (pF) 100 80 80 60 VDS = 0 V 5V 60 40 10 V 40 VDS = 0 V 20 0 0 20 0 0 5V 10 V −4 −8 −12 −16 −20 VGS, GATE−SOURCE VOLTAGE (VOLTS) −4 −8 −12 −16 −20 VGS, GATE−SOURCE VOLTAGE (VOLTS) Figure 1. Common Source Input Capacitance versus Gate−Source Voltage 16 RDS(on), DRAIN−SOURCE ON−RESISTANCE (OHMS) 100 90 ID, DRAIN CURRENT (mA) 80 70 60 50 40 30 20 10 0 0 −1 −2 −3 −4 −5 −6 −7 −8 VGS(off), GATE−SOURCE CUTOFF VOLTAGE (VOLTS) 0 0 12 RDS(on): VDS ≤ 0.1 V RDS(on): VGS = 0 V 8 Figure 2. Common Source Reverse Feedback Capacitance versus Gate−Source Voltage VGS = 0 V −0.25 V −0.5 V −0.75 V −1 V −1.25 V 2 4 6 8 10 12 14 16 18 20 4 VGS(off): VDS = 5 V VGS(off): ID = 1.0 mA VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 3. On−Resistance versus Gate−Source Cutoff Voltage Figure 4. Output Charac...

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