Maker : Philips Semiconductors
Part No. : J110

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DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs FEATURES • High speed switching • Interchangeability of drain and source connections • Low RDSon at zero gate voltage (<8 Ω for J108). APPLICATIONS • Analog switches • Choppers and commutators. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source voltage gate-source cut-off voltage J108 J109 J110 IDSS drain current J108 J109 J110 Ptot total power dissipation up to Tamb = 50 °C VGS = 0; VDS = 5 V ID = 1 µA; VDS = 5 V CONDITIONS handbook, halfpage 2 J108; J109; J110 PINNING - TO-92 PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION 1 3 g MAM197 d s Fig.1 Simplified outline and symbol. MIN. − −3 −2 −0.5 80 40 10 − MAX. ±25 −10 −6 −4 − − − 400 UNIT V V V V mA mA mA mW 1996 Jul 30 2 Philips Semiconductors Product specification N-channel silicon junction FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage gate-drain voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature up to Tamb = 50 °C open drain open source CONDITIONS − − − − − J108; J109; J110 MIN. MAX. ±25 −25 −25 50 400 150 150 V V V UNIT mA mW °C °C −65 − THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient VALUE 250 UNIT K/W STATIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source breakdown voltage gate-source cut-off voltage J108 J109 J110 IDSS drain current J108 J109 J110 IGSS IDSX RDSon gate leakage current drain-source cut-off current drain-source on-state resistance J108 J109 J110 VGS = −15 V; VDS = 0 VGS = −10 V; VDS = 5 V VGS = 0; VDS = 100 mV − − − − − − 8 12 18 Ω Ω Ω VGS = 0; VDS = 15 V 80 40 10 − − − − − − − − − − −3 3 mA mA mA nA nA CONDITIONS IG = −1 µA; VDS = 0 ID = 1 µA; VDS = 5 V −3 −2 −0.5 − − − −10 −6 −4 − MIN. − TYP. MAX. −25 V V V V V UNIT 1996 Jul 30 3 Philips Semiconductors Product specification N-channel silicon junction FETs DYNAMIC CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL Cis PARAMETER input capacitance CONDITIONS VDS = 0; VGS = −10 V; f = 1 MHz VDS = 0; VGS = 0; f = 1 MHz; Tamb = 25 °C Crs td ton ts toff Note 1. Test conditions for switching times are as follows: VDD = 1.5 V; VGS = 0 to VGSoff (all types) VGSoff = −12 V; RL = 100 Ω (J108) VGSoff = −7 V; RL = 100 Ω (J109) VGSoff = −5 V; RL = 100 Ω (J110). reverse transfer capacitance VDS = 0; VGS = −10 V; f = 1 MHz note 1 Switching times; see Fig.2 delay time turn-on time storage time turn-off time 2 4 4 6 J108; J109; J110 TYP. 15 50 8 MAX. 30 85 15 − − − − UNIT pF pF pF ns ns ns ns handbook, halfpage 50 Ω 10 µF 0.1 µF VDD 10 nF RL SAMPLING SCOPE 50 Ω DUT 50 Ω MGE773 Fig.2 Switching circuit. 1996 Jul 30 4 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 handbook, full pagewidth VGS = 0 V Vi 10% VGS off 90% toff ts 90% Vo 10% tf td ton tr MGE774 Fig.3 Input and output waveforms. 1996 Jul 30 5 Philips Semiconductors Product specification N-channel silicon junction FETs PACKAGE OUTLINE J108; J109; J110 andbook, full pagewidth 0.40 min 4.2 max 1.7 1.4 1 4.8 max 2.54 2 3 0.66 0.56 5.2 max 12.7 min 0.48 0.40 2.0 max (1) MBC01...

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