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Part No. : J112

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www.DataSheet4U.com J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Drain −Gate Voltage Gate −Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above = 25°C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value −35 −35 50 350 2.8 300 −65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C http://onsemi.com 1 DRAIN 3 GATE 2 SOURCE Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1 2 3 TO−92 CASE 29−11 STYLE 5 MARKING DIAGRAM J11x AYWW G G J11x = Device Code x = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 March, 2006 − Rev. 2 Publication Order Number: J111/D J111, J112 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate −Source Breakdown Voltage (IG = −1.0 mAdc) Gate Reverse Current (VGS = −15 Vdc) Gate Source Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 mAdc) Drain−Cutoff Current (VDS = 5.0 Vdc, VGS = −10 Vdc) ON CHARACTERISTICS Zero−Gate−Voltage Drain Current(1) (VDS = 15 Vdc) IDSS J111 J112 rDS(on) J111 J112 Cdg(on) + Csg(on) Cdg(off) Csg(off) − − − 30 50 28 pF 20 5.0 2.0 − − − W mAdc J111 J112 ID(off) V(BR)GSS IGSS VGS(off) −3.0 −1.0 − −10 −5.0 1.0 nAdc 35 − − −1.0 Vdc nAdc Vdc Symbol Min Max Unit Static Drain−Source On Resistance (VDS = 0.1 Vdc) Drain Gate and Source Gate On−Capacitance (VDS = VGS = 0, f = 1.0 MHz) Drain Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz) Source Gate Off−Capacitance (VGS = −10 Vdc, f = 1.0 MHz) 1. Pulse Width = 300 ms, Duty Cycle = 3.0%. − − 5.0 5.0 pF pF ORDERING INFORMATION Device J111RL1 J111RL1G J111RLRA J111RLRAG J111RLRP J111RLRPG J112 J112G J112RL1 J112RL1G J112RLRA J112RLRAG Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) 2000 Units / Tape & Reel 2000 Units / Tape & Reel 1000 Units / Bulk 2000 Units / Tape & Reel 2000 Units / Tape & Reel 2000 Units / Tape & Reel Shipping † †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 J111, J112 TYPICAL SWITCHING CHARACTERISTICS 1000 t d(on), TURN−ON DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD′ J111 J112 J113 TJ = 25°C VGS(off) = 12 V = 7.0 V = 5.0 V 1000 500 200 t r , RISE TIME (ns) 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD′ J111 J112 J113 TJ = 25°C VGS(off) = 12 V = 7.0 V = 5.0 V Figure 1. Turn−On Delay Time 1000 t d(off), TURN−OFF DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD′ TJ = 25°C J111 J112 J113 VGS(off) = 12 V = 7.0 V = 5.0 V 1000 500 200 t f , FALL TIME (ns) 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 RK = 0 Figure 2. Rise Time TJ = 25°C RK = RD′ J111 J112 J113 VGS(off) = 12 V = 7.0 V = 5.0 V 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA)...

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