Maker : Fairchild Semiconductor
Part No. : J113

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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Discrete POWER & Signal Technologies J111 J112 J113 MMBFJ111 MMBFJ112 MMBFJ113 G D G S TO-92 D SOT-23 Mark: 6P / 6R / 6S S N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ ,T stg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Parameter Value 35 - 35 50 -55 to +150 Units V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J111- J113 350 2.8 125 357 Max *MMBFJ111 225 1.8 556 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage I G = - 1.0 µA, VDS = 0 VGS = - 15 V, VDS = 0 VDS = 5.0 V, ID = 1.0 µA J111 J112 J113 - 3.0 - 1.0 - 0.5 - 35 - 1.0 - 10 - 5.0 - 3.0 1.0 V nA V V V nA ID(off) Gate-Source Cutoff Voltage VDS = 5.0 V, VGS = - 10 V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 VDS ≤ 0.1 V, VGS = 0 J111 J112 J113 J111 J112 J113 20 5.0 2.0 30 50 100 mA mA mA Ω Ω Ω rDS(on) Drain-Source On Resistance SMALL-SIGNAL CHARACTERISTICS Cdg(on) Csg(on) Cdg(off) Csg(off) Drain Gate & Source Gate On Capacitance Drain-Gate Off Capacitance Source-Gate Off Capacitance VDS = 0, VGS = 0, f = 1.0 MHz VDS = 0, VGS = - 10 V, f = 1.0 MHz VDS = 0, VGS = - 10 V, f = 1.0 MHz 28 5.0 5.0 pF pF pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0% Typical Characteristics Common Drain-Source 10 - DRAIN CURRENT (mA) V GS = 0 V - 0.2 V Parameter Interactions r g fs - TRANSCONDUCTANCE (mmhos) 100 r DS TA = 25°C TYP V GS(off) = - 2.0 V 100 DS - DRAIN "ON" RESISTANCE (Ω) Ω 8 - 0.4 V 50 50 6 - 0.6 V 20 g fs I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ 1.0 mA, V GS = 0 V GS(off) @ V DS = 15V, I D = 1.0 nA _ 20 4 - 0.8 V - 1.0 V D 2 - 1.4 V - 1.2 V 10 I DSS 10 I 0 0 0.4 0.8 1.2 1.6 V DS - DRAIN-SOURCE VOLTAGE (V) 2 5 _ 0.5 _ _ 1 2 5 V GS (OFF) - GATE CUTOFF VOLTAGE (V) _ 5 10 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch (continued) Typical Characteristics (continued) Transfer Characteristics 40 I D - DRAIN CURRENT (mA) VGS(off) = - 3.0 V - 55°C Transfer Characteristics 16 I D - DRAIN CURRENT (mA) VGS(off) = - 1.6 V - 55°C 25°C 125°C V DS = 15 V 30 25°C 125°C VGS(off) = - 2.0 V 12 20 125°C 25°C - 55°C 8 V GS(off) = - 1.1 V 125°C 25°C - 55°C 10 V DS = 15 V 4 0 0 -1 -2 -3 VGS - GATE-SOURCE VOLTAGE (V) 0 0 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) - TRANSCONDUCTANCE (mmhos) Transfer Characteristics - TRANSCONDUCTANCE (mmhos) 30 VGS(off) = - 3.0 V - 55°C 25°C 125°C Transfer Characteristics 30 V GS(off) = - 1.6 V - 55°C 20 V GS(off) = - 2.0 V - 55°C 25°C 125°C 20 25°C 125°C V GS(off) = - 1.1 V 10 10 - 55°C 25°C 125°C V DS = 15 V V DS = 15 V fs g 0 -1 -2 VGS - GATE-SOURCE VOLTAGE (V) -3 g 0 fs 0 0 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) Ω r DS - DRAIN "ON" RESISTANCE (Ω ) On Resis...

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