Maker : Hitachi Semiconductor
Part No. : J117

  Datasheet PDF : J117.pdf
  Cross Reference : J117 Cross Reference
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Product Information

2SJ117 Silicon P-Channel MOS FET ADE-208-1180 (Z) 1st. Edition Mar. 2001 Application www.DataSheet4U.com High speed power switching Features • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SJ117 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. Value at TC = 25°C www.DataSheet4U.com Symbol VDSS VGSS ID I D(pulse) I DR Pch* Tch Tstg 1 Ratings –400 ±20 –2 –4 –2 40 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS –400 — — –2.0 — Typ — — — — 5 Max — ±1 –1 –5.0 7 Unit V µA mA V Test conditions I D = –10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = –320 V, VGS = 0 I D = –1 mA, VDS = –10 V I D = –1 A, VGS = –15 V*1 S pF pF pF ns ns ns ns V ns I F = –1 A, VGS = 0 I F = –1 A, VGS = 0, diF/dt = 100 A/µs I D = –2 A, VGS = –15 V, RL = 15 I D = –1 A, VDS = –20 V*1 VDS = –10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr VGS(off) RDS(on) 0.4 — — — — — — — — — 0.7 520 110 15 10 25 45 35 –0.8 300 — — — — — — — — — — 2 2SJ117 60 Power vs. Temperature Derating Maximum Safe Operation Area –10 Channel Dissipation Pch (W) ID (peak) Drain Current ID (A) 40 –3 –1.0 –0.3 –0.1 –0.03 0 www.DataSheet4U.com 50 100 Case Temperature TC (°C) 150 –1 –10 –30 –100 –300 –1,000 –3 Drain to Source Voltage VDS (V) ID (max) D C O PW pe = 10 Ta = 25°C 10 µs 10 m s( 1 0 µs ot ra tio Sh 20 n (T ) C = 25 °C ) Typical Output Characteristics –2.0 Typical Transfer Characteristics –5 VDS = –20 V Pulse Test 0V –1 –15 V –6 V Drain Current ID (A) –5 V –4 –1.6 TC = –25°C 25°C Drain Current ID (A) TC = 25°C –1.2 –3 –4.5 V –0.8 75°C –2 –4 V –0.4 –1 VGS = –3 V 0 –8 –20 –4 –12 –16 Drain to Source Voltage VDS (V) 0 –2 –6 –8 –4 –10 Gate to Source Voltage VGS (V) 3 2SJ117 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Forward Transfer Admittance yfs (S) –20 5 VDS = –20 V Pulse Test Ta = –25°C Forward Transfer Admittance vs. Drain Current –16 2 1.0 0.5 –12 –2 A –8 –1 A ID = –0.5 A Pulse Test –8 –20 –4 –12 –16 Gate to Source Voltage VGS (V) 75°C 25°C 0.2 0.1 0.05 –0.2 –4 0 www.DataSheet4U.com –0.5 –1.0 –2 –5 –10 Drain Current ID (A) –20 Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 10 VGS = 15 V ID = –1 A 8 Capacitance C (pF) 1,000 300 100 1,0000 3,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 6 4 Coss 30 10 3 Crss 2 0 –40 1 40 0 80 120 Case Temperature TC (°C) 160 0 –40 –80 –120 –160 –200 Drain to Source Voltage VDS (V) 4 2SJ117 Forward Transfer Admittance vs. Frequency Forward Transfer Admittance yfs (S) Switching Characteristics 1.0 0.5 TC = 25°C VDS = –10 V ID = –0.5 A 1,000 300 Switching Time t (ns) 100 30 10 3 1 –0.2 td (off) tf tr td (on) 0.2 0.1 0.05 0.02 0.01 100 k www.DataSheet4U.com...

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