Maker : Fairchild Semiconductor
Part No. : J13009

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Product Information

www.DataSheet4U.com FJP13009 High Voltage Fast-Switching NPN Power Transistor March 2007 FJP13009 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 2.Collector 3.Emitter 1.Base Absolute Maximum Ratings* Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current TC = 25°C unless otherwise noted (notes_1) Parameter Value 700 400 9 12 24 6 100 150 -65 ~ 150 Units V V V A A A W °C °C Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES_1: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Package Marking and Ordering Information Device Item (notes_2) FJP13009 FJP13009H2TU FJP13009TU Notes_2 : 1) The Affix “-H2” means the hFE classification. 2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging. Device Marking J13009 J130092 J13009 Package TO-220 TO-220 TO-220 Packing Method Bulk TUBE TUBE Qty(pcs) 1,200 1,000 1,000 ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJP13009 Rev. B www.DataSheet4U.com FJP13009 High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Symbol VCEO(sus) IEBO hFE VCE(sat) TC = 25°C unless otherwise noted Parameter Collector-Emitter Sustaining Voltage Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage Conditions IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 5A (hFE1) VCE = 5V, IC = 8A IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 12A, IB = 3A IC = 5A, IB = 1A IC = 8A, IB = 1.6A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 8A IB1 = - IB2 = 1.6A, RL = 15,6Ω Min. 400 Typ. Max 1 Units V mA 8 6 40 30 1 1.5 3 1.2 1.6 180 V V V V V pF MHz 1.1 3 0.7 µs µs µs VBE (sat) Cob fT tON tSTG tF * Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time 4 * Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2% hFE Classification Classification hFE1 H1 8 ~ 17 H2 15 ~ 28 2 FJP13009 Rev. B www.fairchildsemi.com www.DataSheet4U.com FJP13009 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 10 VCE = 5V IC = 3 IB hFE, DC CURRENT GAIN 1 VBE(sat) 10 0.1 VCE(sat) 1 0.1 1 10 100 0.01 0.1 1 10 100 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10000 VCC=125V IC=5IB Cob[pF], CAPACITANCE tR, tD [ns], TURN ON TIME 100 1000 tR 10 100 tD, VBE(off)=5V 1 0.1 1 10 100 1000 10 0.1 1 10 100 VCB[V], COLLECTOR BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn On Time 10000 100 tSTG, tF [ns], TURN OFF TIME VCC=125V IC=5IB µs 10 IC[A], COLLECTOR CURRENT 0µ 10 10 s s 1m tSTG DC 1000 1 0.1 tF 100 0.1 1 10 100 0.01 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Turn Off Time Figure 6. Forward Bias Safe Operating Area 3 FJP13009 Rev. B www.fairchildsemi.com www.DataSheet4U.com FJP13009 High Voltage Fast-Switching NPN Power Transistor Typical Performance Characteristics (Continued) 100 120 IC[A], COLLECTOR CURRENT 10 PC[W], POWER DISSIPATION Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 100 80 1 60 40 0.1 20 0.01 10 0 100 1000 10000 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C],...

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