Maker : Vishay Siliconix
Part No. : J271

  Datasheet PDF : J271.pdf
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Product Information

J/SST270 Series Vishay Siliconix P-Channel JFETs J270 J271 PRODUCT SUMMARY Part Number J/SST270 J/SST271 SST270 SST271 VGS(off) (V) 0.5 to 2.0 1.5 to 4.5 V(BR)GSS Min (V) 30 30 gfs Min (mS) 6 8 IDSS Min (mA) –2 –6 FEATURES D D D D Low Cutoff Voltage: J270 <2 V High Input Impedance Very Low Noise High Gain BENEFITS D Full Performance from Low-Voltage Power Supply: Down to 2 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality, Low-Level Signal Amplification APPLICATIONS D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery Amplifiers D Ultrahigh Input Impedance Pre-Amplifiers D High-Side Switching DESCRIPTION The J/SST270 series consists of all-purpose amplifiers for designs requiring p-channel operation. The TO-226AA (TO-92) plastic package provides a low-cost option, while the TO-236 (SOT-23) package provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-226AA (TO-92) D 1 D G 2 S S 3 2 1 TO-236 (SOT-23) 3 G Top View Top View J270 J271 SST270 (S0)* SST271 (S1)* *Marking Code for TO-236 ABSOLUTE MAXIMUM RATINGS Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Document Number: 70258 S-04233—Rev. D, 02-Jul-01 Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C www.vishay.com 8-1 J/SST270 Series Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST270 J/SST271 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Current Drain Cutoff Current Gate-Source Forward Voltage Symbol Test Conditions Typa Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F) IG = 1 mA , VDS = 0 V VDS = –15 V, ID = –1 nA VDS = –15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 125_C VDG = –15 V, ID = –1 mA VDS = –15 V, VGS = 10 V IG = –1 mA , VDS = 0 V 45 30 0.5 –2 2.0 –15 200 30 1.5 –6 4.5 –50 200 V mA pA nA pA V 10 5 10 –10 –0.7 Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos Ciss Crss en VDS = –15 V, VGS = 0 V f = 1 MHz VDG = –10 V, VGS = 0 V f = 1 kHz VDS = –15 V, VGS = 0 V f = 1 kHz 20 4 20 pF 6 15 200 8 18 500 mS mS nV⁄ √Hz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. PSCIA TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 200 rDS(on) – Drain-Source On-Resistance ( Ω ) IDSS 160 rDS 120 –60 –80 gfs – Forward Transconductance (mS) IDSS – Saturation Drain Current (mA) gos – Output Conductance (µS) 15 gfs 12 gos 150 200 –100 Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 18 250 80 –40 9 100 40 rDS @ ID = –1 mA, VGS = 0 V IDSS @ VDS = –15 V, VGS = 0 V 0 0 2 4 6 8 10 VGS(off) – Gate-Source Cutoff Voltage (V) –20 6 gfs and gos @ VDS = –15 V VGS = 0 V, f = 1 kHz 3 0 2 4 6 8 VGS(off) – Gate-Source Cutoff Voltage (V) 50 0 0 10 www.vishay.com 8-2 Document Number: 70258 S-04233—Rev. D, 02-J...

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