Maker : Hitachi Semiconductor
Part No. : J291

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Product Information

2SJ291 Silicon P-Channel MOS FET November 1996 www.DataSheet4U.com Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SJ291 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current www.DataSheet4U.com Avalanche current Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings –60 ±20 –20 –80 –20 –20 Unit V V A A A A mJ W °C °C Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω EAR* Tch 3 34 2 Pch* 60 150 –55 to +150 Tstg 2 2SJ291 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current www.DataSheet4U.com Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) –60 ±20 — — –1.0 — — Typ — — — — — 0.05 0.07 16 2200 1000 300 25 130 320 210 –1.1 160 Max — — ±10 –250 –2.25 0.065 0.095 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns Test conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = –50 V, VGS = 0 ID = –1 mA, VDS = –10 V ID = –10 A, VGS = –10 V* ID = –10 A, VGS = –4 V* VDS = –10 V, VGS = 0, f = 1 MHz 1 1 Zero gate voltage drain current IDSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 10 — — — — — — — — — ID = –10 A, VDS = –10 V* 1 ID = –10 A, VGS = –10 V, RL = 3 Ω IF = –20 A, VGS = 0 IF = –20 A, VGS = 0, diF/dt = 50 A/µs 3 2SJ291 Power vs. Temperature Derating 80 Pch (W) Channel Dissipation 60 40 20 www.DataSheet4U.com 0 50 100 150 Tc (°C) 200 Case Temperature Maximum Safe Operation Area –500 I D (A) –200 –100 –50 –20 –10 Operation in this area is DC 10 µs 10 PW Op era 0µ Drain Current =1 tio 0m Tc 1m s( s s ho t) –5 limited by R DS(on) –2 n( 1s =2 5° C) –1 Ta = 25 °C –0.5 –1 –2 –5 –10 –20 –50 –100 Drain to Source Voltage V DS (V) Typical Output Characteristics –50 –10 V –6 V –5 V –4.5 V Pulse Test –4 V –3.5 V I D (A) Drain Current –40 –30 –20 –3 V VGS = –2.5 V 0 –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V) –10 Typical Transfer Characteristics –20 V DS = –10 V Pulse Test ID Drain Current (A) –16 –12 –8 Tc = –25 °C –4 25 °C 75 °C 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V) 4 2SJ291 Drain to Source Saturation Voltage vs. Gate to Source Voltage –2.0 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test –1.6 –1.2 –20 A –0.8 –10 A –0.4 I D = –5 A www.DataSheet4U.com 0 –2 –4 –6 Gate to Source Voltage –8 –10 V GS (V) Drain to Source On State Resistance R DS(on) ( Ω ) Static Drain to Source on State Resistance vs. Drain Current 1 Pulse Test 0.5 0.2 0.1 VGS = –4 V –10 V 0.05 0.02 0.01 –1 –2 –5 –10 –20 –50 –100 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance R DS(on) ( Ω) 0.2 Pulse Test 0.16 0.12 I D = –20 A VGS = –4 V –5 A –10 A –5 A –10 A –20 A 0.08 0.04 –10 V 0 –40 0 40 80 120 160 Case Temperature Tc (°C) 5 2SJ291 For...

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