Maker : Motorola
Part No. : J309

  Datasheet PDF : J309.pdf
  Cross Reference : J309 Cross Reference
  Buy Component : J309 Find Stock and Price

Shortcut : J300  J3006G21D  J3011G21D  J3018G21K  J3026G01D  J3026G21D  J3026G21DNL  J304  J305  J306  J308  J308  J308  J308  J309  J309  J309  J309  J309  J309  J309 

Product Information

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by J308/D JFET VHF/UHF Amplifiers J308 1 DRAIN N–Channel — Depletion 3 GATE J309 J310 Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VGS IGF PD TJ Tstg Value 25 25 10 350 2.8 – 65 to +125 – 65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C CASE 29–04, STYLE 5 TO–92 (TO–226AA) 1 2 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = –15 Vdc, VDS = 0, TA = 25°C) (VGS = –15 Vdc, VDS = 0, TA = +125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) J308 J309 J310 V(BR)GSS IGSS — — VGS(off) – 1.0 – 1.0 – 2.0 — — — – 6.5 – 4.0 – 6.5 — — –1.0 –1.0 nAdc µAdc Vdc – 25 — — Vdc ON CHARACTERISTICS Zero – Gate –Voltage Drain Current(1) (VDS = 10 Vdc, VGS = 0) IDSS J308 J309 J310 VGS(f) 12 12 24 — — — — — 60 30 60 1.0 Vdc mAdc Gate–Source Forward Voltage (VDS = 0, IG = 1.0 mAdc) SMALL– SIGNAL CHARACTERISTICS Common–Source Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yis) J308 J309 J310 Re(yos) Gpg — — — — — 0.7 0.7 0.5 0.25 16 — — — — — mmhos dB mmhos Common–Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common–Gate Power Gain (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) 1. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 3.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 J308 J309 J310 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit SMALL– SIGNAL CHARACTERISTICS (continued) Common–Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common–Gate Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common–Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308 J309 J310 gos gfg J308 J309 J310 gog J308 J309 J310 Cgd Cgs — — — — — 150 100 150 1.8 4.3 — — — 2.5 5.0 pF pF — — — 13000 13000 12000 — — — µmhos Re(yfs) Re(yig) gfs 8000 10000 8000 — — — — — 20000 20000 18000 250 µmhos µmhos — — 12 12 — — mmhos mmhos µmhos Common–Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Common–Gate Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Common–Gate Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Gate–Drain Capacitance (VDS = 0, VGS = –10 Vdc, f = 1.0 MHz) Gate–Source Capacitance (VDS = 0, VGS = –10 Vdc, f = 1.0 MHz) FUNCTIONAL CHARACTERISTICS Noise Figure (VDS = 10 Vdc, ID = 10 mAdc, f = 450 MHz) Equivalent Short–Circuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) NF en — — 1.5 10 — — dB nV Hz 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data J308 J309 J310 50 Ω SOURCE U310 C3 L1 C5 C7 1.0 k +VDD C1 = C2 = 0.8 – 10 pF, JFD #MVM010W. C3 = C4 = 8.35 pF Erie #539–002D. C5 = C6 = 5000 pF Erie (2443–000). C7 = 1000 pF, Allen Bradley #FA5C. RFC = 0.33 µH Miller #9230–30. L1 = One Turn #16 Cu, 1/4″ I.D. (Air Core). L2P = One Turn #16 Cu, 1/4″ I.D. (Air Core). L2S = One Turn #16 Cu, 1/4″ I.D. (Air Core). RFC C1 C2 C4 C6 L2P L2S 50 Ω LOAD Figure 1. 450 MHz Common–Gate Amplifier Test Circuit 60 I D , DRAIN CURRENT (mA) VDS = 10 V 50 40 30 20 10 –5.0 IDSS + 25°C + 25°C TA = – 55°C 60 50 40 +150°C + 25°C – 55°C 30 20 IDSS, SATURATION DRAIN CURRENT (mA) 70 70 Yfs , FORWARD TRANSCONDUCTANCE (mmhos) 35 30 25 20 15 10 +150°C + 25°C – 55°C +150°C VDS = 10 V f = 1.0 MHz TA = – 55°C + 25°C +150°...

Link URL