Maker : Fairchild Semiconductor
Part No. : J309

  Datasheet PDF : J309.pdf
  Cross Reference : J309 Cross Reference
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Product Information

J309 / J310 / MMBFJ309 / MMBFJ310 Discrete POWER & Signal Technologies J309 J310 MMBFJ309 MMBFJ310 G D G S TO-92 D SOT-23 Mark: 6U / 6T S N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Absolute Maximum Ratings* Symbol VDS VGS IGF TJ ,Tstg Drain-Source Voltage Gate-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Parameter Value 25 - 25 10 -55 to +150 Units V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J309 / J310 350 2.8 125 357 Max *MMBFJ309 225 1.8 556 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ã 1997 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)GSS IGSS VGS(off) Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = - 1.0 µA, VDS = 0 VGS = - 15 V, VDS = 0 VGS = - 15 V, VDS = 0, TA = 125°C VDS = 10 V, ID = 1.0 nA J309 J310 - 25 - 1.0 - 1.0 - 4.0 - 6.5 V nA µA V V - 1.0 - 2.0 ON CHARACTERISTICS IDSS VGS(f) Zero-Gate Voltage Drain Current* Gate-Source Forward Voltage VDS = 10 V, VGS = 0 VDS = 0, IG = 1.0 mA J309 J310 12 24 30 60 1.0 mA mA V SMALL SIGNAL CHARACTERISTICS Re(yis) Common-Source Input Conductance VDS = 10, ID = 10 mA, f = 100 MHz J309 J310 Common-Source Output VDS = 10, ID = 10 mA, f = 100 MHz Conductance Common-Gate Power Gain VDS = 10, ID = 10 mA, f = 100 MHz Common-Source Forward Transconductance Common-Gate Input Conductance Common-Source Forward Transconductance VDS = 10, ID = 10 mA, f = 100 MHz VDS = 10, ID = 10 mA, f = 100 MHz VDS = 10, ID = 10 mA, f = 1.0 kHz J309 J310 VDS = 10, ID = 10 mA, f = 1.0 kHz 10,000 8000 0.7 0.5 0.25 16 12 12 mmhos mmhos mmhos dB mmhos mmhos 20,000 µmhos 18,000 µmhos 150 µmhos µmhos µmhos µmhos µmhos pF pF dB Re(yos) Gpg Re(yfs) Re(yig) gfs gos gfg gog Cdg Csg NF en Common-Source Output Conductance Common-Gate Forward Conductance VDS = 10, ID = 10 mA, f = 1.0 kHz J309 J310 Common-Gate Output Conductance VDS = 10, ID = 10 mA, f = 1.0 kHz J309 J310 Drain-Gate Capacitance VDS = 0, VGS = - 10, f = 1.0 MHz Source-Gate Capacitance Noise Figure Equivalent Short-Circuit Input Noise Voltage VDS = 0, VGS = - 10, f = 1.0 MHz VDS = 10 V, ID = 10 mA, f = 450 MHz VDS = 10 V, ID = 10 mA, f = 100 Hz 13,000 12,000 100 150 2.0 4.1 3.0 6.0 2.5 5.0 nV/ÖHz *Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0% J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued) Typical Characteristics Transfer Characteristics Transfer Characteristics Transfer Characteristics Transfer Characteristics Input Admittance Forward Transadmittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued) Typical Characteristics (continued) Common Drain-Source Output Conductance vs. Drain Current Output Admittance Capacitance vs. Voltage Noise Voltage vs. Frequency Reverse Transadmittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued) Typical Characteristics (continued) Parameter Interactions Transconductance vs. Drain Current Leakage Current vs. Voltage POWER DISSIPATION vs AMBIENT TEMPERATURE P - POWER DISSIPATION ...

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