Maker : NEC
Part No. : J449

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 3.2 ±0.2 4.5 ±0.2 2.7 ±0.2 FEATURES • Low On-Resistance RDS(on) = 0.8 Ω MAX. (@ VGS = –10 V, ID = –3.0 A) 15.0 ±0.3 12.0 ±0.2 13.5 MIN. • Low Ciss Ciss = 1040 pF TYP. • High Avalanche Capability Ratings • Isolated TO-220 Package ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* VDSS VGSS ID(DC) ID(pulse) –250 m 30 m 6.0 m 24 V V A A W W ˚C A mJ 0.7 ±0.1 2.54 4 ±0.2 3 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 0.65 ±0.1 2.5 ±0.1 Total Power Dissipation (Tc = 25 ˚C) PT1 Total Power Dissipation (TA = 25 ˚C) PT2 Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % Tch Tstg IAS EAS 35 2.0 150 –6.0 180 –55 to +150 ˚C 1 2 3 1. Gate 2. Drain 3. Source MP-45F(ISOLATED TO-220) Drain ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = –20 V → 0 Gate Body Diode Source www.DataSheet4U.com Document No. D10030EJ1V0DS00 Date Published May 1995 P Printed in Japan © 1995 2SJ449 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 1040 360 70 24 16 47 14 23.1 7.1 12.9 0.92 155 930 –4.0 2.0 MIN. TYP. 0.55 –4.8 3.5 –100 m 100 MAX. 0.8 –5.5 UNIT Ω V S TEST CONDITIONS VGS = –10 V, ID = –3.0 A VDS = –10 V, ID = –1 mA VDS = –10 V, ID = –3.0 A VDS = –250 V, VGS = 0 VGS = m 30 V, VDS = 0 VDS = –10 V VGS = 0 f = 1 MHz ID = –3.0 A VGS(on) = –10 V VDD = –125 V RG = 10 Ω, RL = 42 Ω ID = –6.0 A VDD = –200 V VGS = –10 V IF = –6.0 A, VGS = 0 IF = –6.0 A, VGS = 0 di/dt = 50 A/µs µA nA pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time D.U.T. RG = 25 Ω PG VGS = –20 → 0 V IAS ID VDD BVDSS VDS VGS 0 t 50 Ω L VDD PG. D.U.T. RG RG = 10 Ω RL VDD VGS VGS Wave 010 % Form ID ID Wave Form 10 % 0 td (on) ton tr VGS (on) 90 % 90 % 90 % ID 10 % td (off) toff tf t = 1µs Duty Cycle ≤ 1 % Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = –2 mA PG. 50 Ω RL www.DataSheet4U.com VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SJ449 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 35 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 30 25 20 15 10 5 0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C TC - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed FORWARD BIAS SAFE OPERATING AREA –100 ID(pulse) PW –20 10 ID - Drain Current - A ID - Drain Current - A –10 R VG (at DS ) (on d ite V) Lim–20 = S = 0 –16 –12 –8 –4 ID(DC) w 10 10 1 m s 0 DC ms s VGS= –20 V –10 V µ m s Po er –1.0 Di ss ipa tio n TC = 25 ˚C –0.1 Single Pulse –1.0 –10 Lim ite d –100 –1000 0 –5 –10 –15 –20 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS –100 Pulsed ID - Drain Current - A –10 TA= –25 ˚C 25 ˚C 75 ˚C 125 ˚C –1.0 ...

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