Maker : Philips Semiconductors
Part No. : JC337-25

  Datasheet PDF : JC337-25.pdf
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Product Information

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 JC337 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 10 1999 Apr 27 Philips Semiconductors Product specification NPN general purpose transistor FEATURES • Low current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. 1 handbook, halfpage JC337 PINNING PIN 1 2 3 base collector emitter DESCRIPTION DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: JC327. 2 3 2 1 3 MAM259 Fig.1 Simplified outline TO-92; SOT54 and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 50 45 5 500 1 200 625 +150 150 +150 V mA A mA mW °C °C °C UNIT 1999 Apr 27 2 Philips Semiconductors Product specification NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE hFE VCEsat VBE Cc fT Note 1. VBE decreases by about 2 mV/K with increasing temperature. PARAMETER collector cut-off current emitter cut-off current DC current gain JC337-25 DC current gain base-emitter voltage collector capacitance transition frequency IC = 500 mA; VCE = 1 V IC = 500 mA; VCE = 1 V; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz collector-emitter saturation voltage IC = 500 mA; IB = 50 mA CONDITIONS IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 100 mA; VCE = 1 V 160 40 − − − 100 − − − − 5 − MIN. − − − TYP. − − − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 0.2 JC337 UNIT K/mW MAX. 100 5 100 400 − 700 1.2 − − UNIT nA µA nA mV V pF MHz 1999 Apr 27 3 Philips Semiconductors Product specification NPN general purpose transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads JC337 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 27 4 Philips Semiconductors Product specification NPN general purpose transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values JC337 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification...

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