Maker : Philips Semiconductors
Part No. : JC547

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Shortcut : JC546  JC546B  JC547  JC547A  JC547B  JC548  JC548B  JC549  JC549B  JC549C 

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC546; JC547; JC548 NPN general purpose transistors Product specification Supersedes data of 1997 Mar 14 1999 Apr 27 Philips Semiconductors Product specification NPN general purpose transistors FEATURES • Low current max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC556, JC557 and JC558. 1 handbook, halfpage 2 3 JC546; JC547; JC548 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO JC546 JC547 JC548 VCEO collector-emitter voltage JC546 JC547 JC548 VEBO emitter-base voltage JC546; JC547 JC548 IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector − − − − − − −65 − −65 6 5 100 200 200 500 +150 150 +150 V V mA mA mA mW °C °C °C open-base − − − 65 45 30 V V V PARAMETER collector-base voltage CONDITIONS open emitter − − − 80 50 30 V V V MIN. MAX. UNIT 1999 Apr 27 2 Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain JC547A JC546B; JC547B; JC548B DC current gain JC547A JC546B; JC547B; JC548B VCEsat VBEsat VBE Cc Ce fT F Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA IC = 10 mA; IB = 0.5 mA; note 1 IC = 100 mA; IB = 5 mA; note 1 IC = 2 mA; VCE = 5 V; note 2 IC = 10 mA; VCE = 5 V; note 2 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 2 mA; VCE = 5 V; see Figs 2 and 3 CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 10 µA; VCE = 5 V; see Figs 2 and 3 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 JC546; JC547; JC548 VALUE 0.25 UNIT K/mW MIN. − − − − − 110 200 − − − − 580 − − − 100 − TYP. − − − 90 150 180 290 90 200 700 900 660 − 2.5 11.5 − 2 MAX. 15 5 100 − − 220 450 250 600 − − 700 770 − − − 10 UNIT nA µA nA mV mV mV mV mV mV pF pF MHz dB IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz 1999 Apr 27 3 Philips Semiconductors Product specification NPN general purpose transistors JC546; JC547; JC548 handbook, full pagewidth 250 MBH723 hFE 200 VCE = 5 V 150 100 50 0 10−2 10−1 1 10 102 IC (mA) 103 JC547A. Fig.2 DC current gain; typical values. handbook, full pagewidth 300 MBH724 hFE VCE = 5 V 200 100 0 10−2 10−1 1 10 102 IC (mA) 103 JC546B; JC547B; JC548B. Fig.3 DC current gain; typical values. 1999 Apr 27 4 Philips Semiconductors Product specification NPN general purpose transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads JC546; JC547; JC548 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregu...

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