Maker : Philips Semiconductors
Part No. : JC550C

  Datasheet PDF : JC550C.pdf
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC549; JC550 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 08 Philips Semiconductors Product specification NPN general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC559 and JC560. Fig.1 1 handbook, halfpage JC549; JC550 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 3 2 1 3 MAM259 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage JC549 JC550 VCEO collector-emitter voltage JC549 JC550 ICM Ptot hFE fT peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V; f = 100 MHz open base − − − − 200 100 30 45 200 500 800 − MHz V V mA mW open emitter − − 30 50 V V CONDITIONS MIN. MAX. UNIT 1997 Jul 08 2 Philips Semiconductors Product specification NPN general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO JC549 JC550 VCEO collector-emitter voltage JC549 JC550 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 PARAMETER collector-base voltage CONDITIONS open emitter − − MIN. JC549; JC550 MAX. 30 50 30 45 5 100 200 200 500 +150 150 +150 V V V V V UNIT mA mA mA mW °C °C °C VALUE 250 UNIT K/W 1997 Jul 08 3 Philips Semiconductors Product specification NPN general purpose transistors CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain JC549B; JC550B JC549C; JC550C hFE DC current gain JC549; JC550 JC549B; JC550B JC549C; JC550C VCEsat VBEsat VBE Cc Ce fT F collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 mA; IB = 0.5 mA; note 1 IC = 100 mA; IB = 5 mA; note 1 IC = 2 mA; VCE = 5 V; note 2 IC = 10 mA; VCE = 5 V; note 2 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 500 mV; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. IC = 2 mA; VCE = 5 V; see Figs 2 and 3 CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 10 µA; VCE = 5 V; see Figs 2 and 3 MIN. − − − − − 200 200 420 − − − − 580 − − − 100 − − JC549; JC550 TYP. − − − 150 270 − 290 520 90 200 700 900 660 − 2.5 11.5 − − − MAX. 15 5 100 − − 800 450 800 250 600 − − 700 770 − − − 4 4 UNIT nA µA nA mV mV mV mV mV mV pF pF MHz dB dB 1997 Jul 08 4 Philips Semiconductors Product specification NPN general purpose transistors JC549; JC550 handbook, full pagewidth 300 MBH724 hFE VCE = 5 V 200 100 0 10−2 10−1 1 10 102 IC (mA) 103 JC549B; JC550B. Fig.2 DC current gain; typical values. handbook, f...

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