Maker : Philips Semiconductors
Part No. : JC556B

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC556; JC557; JC558 PNP general purpose transistors Product specification Supersedes data of 1997 Jul 02 1999 Apr 27 Philips Semiconductors Product specification PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complements: JC546, JC547 and JC548. 1 handbook, halfpage JC556; JC557; JC558 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 3 2 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO JC556 JC557 JC558 VCEO collector-emitter voltage JC556 JC557 JC558 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base − − − − − − − − −65 − −65 −65 −45 −30 −5 −100 −200 −200 500 +150 150 +150 V V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − − −80 −50 −30 V V V MIN. MAX. UNIT 1999 Apr 27 2 Philips Semiconductors Product specification PNP general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat VBEsat VBE Cc Ce fT F Notes 1. VBEsat decreases by about −1.7 mV/K with increasing temperature. 2. VBE decreases by about −2 mV/K with increasing temperature. PARAMETER collector cut-off current emitter cut-off current DC current gain JC556B; JC557B; JC558B collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA IC = −10 mA; IB = −0.5 mA; note 1 IC = −100 mA; IB = −5 mA; note 1 IC = −2 mA; VCE = −5 V; note 2 IC = −10 mA; VCE = −5 V; note 2 CONDITIONS IE = 0; VCB = −30 V IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −2 mA; VCE = −5 V; see Fig.2 PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 JC556; JC557; JC558 VALUE 250 UNIT K/W MIN. − − − 220 − − − − −600 − − − − TYP. −1 − − − −60 −180 −750 −930 −650 − 4 10 − − MAX. UNIT −15 −4 100 475 −300 −650 − − −750 −820 − − − 10 mV mV mV mV mV mV pF pF MHz dB nA µA nA IE = ie = 0; VCE = −10 V; f = 1 MHz IC = ic = 0; VEB = −500 mV; f = 1 MHz IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz IC = −10 mA; VCE = −5 V; f = 100 MHz 100 1999 Apr 27 3 Philips Semiconductors Product specification PNP general purpose transistors JC556; JC557; JC558 handbook, full pagewidth 400 MBH727 hFE VCE = −5 V 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 JC556B; JC557B; JC558B. Fig.2 DC current gain; typical values. 1999 Apr 27 4 Philips Semiconductors Product specification PNP general purpose transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads JC556; JC557; JC558 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 27 5 Philips Semiconductors Product specification PNP general purpose transistors DEFINITI...

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