Maker : Philips Semiconductors
Part No. : JC559

  Datasheet PDF : JC559.pdf
  Cross Reference : JC559 Cross Reference
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Shortcut : JC550  JC550B  JC550C  JC556  JC556B  JC557  JC557B  JC558  JC558B  JC559 

Product Information

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC559 PNP general purpose transistor Product specification Supersedes data of 1997 Jul 09 1999 Apr 27 Philips Semiconductors Product specification PNP general purpose transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V). APPLICATIONS • General purpose switching and amplification • Low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. Fig.1 MAM285 JC559 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 1 handbook, halfpage 2 3 2 1 3 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −30 −30 −5 −100 −200 −200 500 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 27 2 Philips Semiconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified SYMBOL ICBO IEBO hFE VCEsat VBEsat VBE Cc Ce fT F PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = −30 V IE = 0; VCB = −30 V; Tj = 150 °C IC = 0; VEB = −5 V IC = −2 mA; VCE = −5 V see Fig 2 IC = −100 mA; IB = −5 mA; note 1 base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = −10 mA; IB = −0.5 mA; note 1 IC = −100 mA; IB = −5 mA; note 1 IC = −2 mA; VCE = −5 V; note 2 IC = −10 mA; VCE = −5 V; note 2 IE = ie = 0; VCB = −10 V; f = 1 MHz IC = ic = 0; VEB = −500 mV; f = 1 MHz IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz Notes 1. VBEsat decreases by about −1.7 mV/K with increasing temperature. 2. VBE decreases by about −2 mV/K with increasing temperature. MIN. − − − 125 − − − − −600 − − − − − TYP. −1 − − − −60 −180 −750 −930 −650 − 4 12 − − − PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 250 JC559 UNIT K/W MAX. UNIT −15 −4 −100 800 −300 −650 − − −750 −820 − − − 4 4 mV mV mV mV mV mV pF pF MHz dB dB nA µA nA collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA; note 1 IC = −10 mA; VCE = −5 V; f = 100 MHz 100 1999 Apr 27 3 Philips Semiconductors Product specification PNP general purpose transistor JC559 handbook, full pagewidth 400 MBH727 hFE VCE = −5 V 300 200 100 0 −10−2 −10−1 −1 −10 −102 IC (mA) −103 Fig.2 DC current gain; typical values. 1999 Apr 27 4 Philips Semiconductors Product specification PNP general purpose transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads JC559 SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 1999 Apr 27 5 Philips Semiconductors Product specification PNP general purpose transistor...

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