Maker : Infineon
Part No. : K06N60

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Product Information

SKP06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: Motor controls, Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Very soft, fast recovery anti-parallel EmCon diode www.DataSheet4U.com PG-TO-220-3-1 (TO-220AB) • Isolated TO-220, 2.5kV, 60s • Pb-free lead plating; RoHS compliant 1 • Qualified according to JEDEC for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKP06N60 SKA06N60 Maximum Ratings Parameter Symbol Value SKP06N60 SKA06N60 C G E PG-TO-220-3-31 (FullPAK) VCE 600V 600V IC 6A 5A VCE(sat) 2.3V 2.3V Tj 150°C 150°C Marking Package K06N60 PG-TO-220-3-1 K06N60 PG-TO-220-3-31 Unit Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Mounting Torque, Screw: M2.5 (Fullpak), M3 (TO220) Operating junction and storage temperature Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s 3 2 VCE IC 600 12 6.9 600 9 5.0 24 24 12 6 24 ±20 10 32 0.5 260 V A ICpul s IF 24 24 12 6 IFpul s VGE tSC Ptot M Tj , Tstg Ts 24 ±20 10 68 0.6 260 V µs W Nm °C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C -55...+150 -55...+150 °C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 3 Maximum mounting processes: 3 1 Rev. 2_1 Apr 06 SKP06N60 SKA06N60 Thermal Resistance Parameter Symbol Conditions Max. Value SKP06N60 SKA06N60 Unit Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case www.DataSheet4U.com Thermal RthJC RthJCD RthJA PG-TO-220-3-1 PG-TO220-3-31 1.85 3.5 62 3.9 5.0 K/W resistance, junction – ambient 65 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µA VCE(sat) V G E = 15 V , I C = 6 A T j =2 5 °C T j =1 5 0° C Diode forward voltage VF V G E = 0V , I F = 6 A T j =2 5 °C T j =1 5 0° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 25 0 µA , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 °C T j =1 5 0° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 600 1.7 1.2 3 Typ. 2.0 2.3 1.4 1.25 4 4.2 350 38 23 32 7 60 max. 2.4 2.8 1.8 1.65 5 Unit V µA 20 700 100 420 46 28 42 nC nH A nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 6 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =6 A V G E = 15 V V G E = 15 V ,t S C ≤ 10 µs V C C ≤ 6 0 0 V, T j ≤ 1 5 0° C - 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2_1 Apr 06 SKP06N60 SKA06N60 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on www.DataSheet4U.com energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =2 5 °C , V R = ...

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