Maker : Infineon Technologies
Part No. : K07N120

  Datasheet PDF : K07N120.pdf
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Product Information

SKW07N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW07N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C 2 C G E PG-TO-247-3-1 (TO-247AC) VCE 1200V IC 8A Eoff 0.7mJ Tj 150°C Marking K07N120 Package PG-TO-247-3-21 Symbol VCE IC Value 1200 16.5 7.9 Unit V A ICpul s IF 27 27 13 7 IFpul s VGE tSC Ptot 27 ±20 10 125 V µs W VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2_1 Apr 06 Power Semiconductors SKW07N120 www.DataSheet4U.com Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µA VCE(sat) V G E = 15 V , I C = 8 A T j =2 5 °C T j =1 5 0° C Diode forward voltage VF V G E = 0V , I F = 7 A T j =2 5 °C T j =1 5 0° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 35 0 µA , V C E = V G E V C E =1200V,V G E =0V T j =2 5 °C T j =1 5 0° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) Symbol RthJC RthJCD RthJA Conditions Max. Value 1 2.5 40 Unit K/W Symbol Conditions Value min. 1200 2.5 typ. 3.1 3.7 2.0 3 1.75 4 6 720 90 40 70 13 75 5 max. 3.6 4.3 2.4 Unit V µA 100 400 100 870 110 50 90 nC nH A nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E =0V,V G E =20V V C E = 20 V , I C = 8 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 96 0 V, I C =8 A V G E = 15 V V G E = 15 V ,t S C ≤ 10 µs 10 0 V≤ V C C ≤ 12 0 0 V, T j ≤ 1 5 0° C - 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2_1 Apr 06 Power Semiconductors SKW07N120 www.DataSheet4U.com Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t F Qrr Irrm d i r r /d t T j =2 5 °C , V R = 8 00 V , I F = 8 A, d i F / d t =4 0 0 A/ µs 0.3 9 400 µC A A/µs 60 ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 °C , V C C = 80 0 V, I C = 8 A, V G E = 15 V /0 V , R G = 47 Ω, 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. 27 29 440 21 0.6 0.4 1.0 35 38 570 27 0.8 0.55 1.35 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Lo...

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