Maker : KODENSHI KOREA CORP
Part No. : K101

  Datasheet PDF : K101.pdf
  Cross Reference : K101 Cross Reference
  Buy Component : K101 Find Stock and Price

Shortcut : K10  K1007  K100F  K100UF  K101  K1010  K1010-01  K1012  K1018  K102  K102  K1024  K102P  K104  K105  K1050E70  K1050F70  K1050G  K1050G70  K1050S  K1050S70  K1058  K1082  K1088-M  K10A60D  K10A60D  K10P-11A15-12  K10P-11A15-120  K10P-11A15-24  K10P-11A15-6  K10P-11AT5-120  K10P-11D15-110  K10P-11D15-12  K10P-11D15-24  K10P-11D15-6  K10P-11D55-110  K10P-11D55-12  K10P-11D55-24  K10P-11DT5-12  K10P-11DT5-24  K10P100M100SF2  K10P104M100SF2  K10P121M100SF2  K10P144M100SF2  K10P81M100SF2  K10T60 

Product Information

Photocoupler K101 • K102 • K104 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor per a channel. The K101 has one channel in a 4-pin mini-flat SMD package. The K102 has two channels in a 8-pin mini-flat SMD package. The K104 has four channels in a 16-pin mini-flat SMD package. FEATURES • Mini-Flat Package • Collector-Emitter Voltage : Min.50V • Current Transfer Ratio : Min.50% (at IF=5mA, VCE=5V) • Electrical Isolation Voltage : AC3750Vrms APPLICATIONS • Interface between two circuits of different potential • Cordless Phone • Programmable Logic Control • Microcomputer DIMENSION K101 4 0.2 3 (Unit : mm) K102 8 0.2 7 6 5 4.4 1 Orientation Mark 7.0 3.6 0.2 0.2 0.5 2 Orientation Mark 4.4 1 2 3 4 7.0 0.05 8.7 0.2 0.2 5.2 0.5 0.2 5.2 0.2 0.15 2.5 0.1 2.54 2.54 0.25 0.1 2.54 K104 16 0.2 15 14 13 12 11 10 9 4.4 1 Orientation Mark 2 3 4 5 6 7 8 7.0 18.8 0.2 0.2 5.2 0.5 0.2 2.5 0.1 2.54 2.54 0.1 1/3 0.15 0.05 0.4Min. 0.15 0.05 0.4 0.1 0.4Min. 2.5 0.4Min. Photocoupler K101 • K102 • K104 MAXIMUM RATINGS Parameter Forward Current Input Reverse Voltage Peak Forward Current Power Dissipation *1 Symbol IF VR IFP PD BVCEO BVECO IC PC Viso Tstg Topr Tsol Ptot *2 Rating 50 5 1 70 50 6 50 150 AC3750 -55~+125 -30~+100 260 200 (Ta=25¡É ) Unit mA V A mW V V mA mW Vrms ¡É ¡É ¡É mW Collector-Emitter Breakdown Voltage Output Emitter-Collector Breakdown Voltage Collector Current Collector Power Dissipation Input to Output Isolation Voltage Storage Temperature Operating Temperature Lead Soldering Temperature Total Power Dissipation *3 *1. Input current with 100µs pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec ELECTRO-OPTICAL CHARACTERISTICS Parameter Forward Voltage Input Reverse Current Capacitance Collector-Emitter Breakdown Voltage Output Emitter-Collector Breakdown Voltage Collector Dark Current Capacitance Current Transfer Ratio *4 (Ta=25¡É , unless otherwise noted) Symbol VF IR CT BVCEO BVECO ICEO CCE CTR VCE(SAT) CIO RIO tr tf Condition IF=10mA VR=5V V=0, f=1MHz IC=0.5mA IE=0.1mA IF=0, VCE=24V VCE=0, f=1MHz IF=5mA, VCE=5V IF=5mA, IC=1mA V=0, f=1MHz RH=40~60%, V=500V VCE=5V, RL=100 IC=2mA Min. 50 6 50 Typ. 1.15 30 10 0.15 1 10 11 Max. 1.30 10 100 600 0.4 - Unit. V §Ë pF V V nA pF % V pF §Ù §Á §Á Collector-Emitter Saturation Voltage Coupled Input-Output Capacitance Input-Output Isolation Resistance Rise Time Fall Time *4. CTR=(IC/IF) X 100 (%) 3 3 2/3 Photocoupler K101 • K102 • K104 Forward Current vs. Ambient Temperature 50 Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation P C (mW) 250 100 Forward Current vs. Forward Voltage Forward Current I F (mA) Forward Current I F (mA) 40 200 80 30 150 60 Ta =70¡É T a=25¡É 20 100 40 10 0 -20 50 0 -20 20 T a=-55¡É 0.4 0.8 1.2 1.6 0 0 20 40 60 80 100 0 20 40 60 80 100 Ambient Temperature Ta (¡É ) Ambient Temperature Ta (¡É ) Forward Voltage VF (V) Collector Current vs. Collector-Emitter Voltage T a =25¡É 40 I F =30mA 1 Dark Current vs. Ambient Temperature 100 Collector Current vs. Ambient Temperature Collector Current I C (mA) I F =20mA 10 I F =10mA I F =5mA Collector Current I C (mA) Dark Current I CEO (§Ë ) V CE =24V 0.1 30 I F =20mA 20 I F =10mA P C(max.) 0.01 1 I F =1mA 10 I F =5mA I F =1mA 0 2 4 6 8 10 0.001 0 20 40 60 80 100 0 -20 0 20 40 60 80 Collector-Emitter Voltage VCE (V) Ambient Temperature Ta (¡É ) Ambient Temperature Ta (¡É ) Response Time vs. Load Resistance 500 V CE =5V I C=2mA Ta =25¡É 100 100 Collector Current vs. Forward Current Ta =25¡É V CE =5V V IN Switching Time Test Circuit V CC R RL VO Response Time tr , tf (¥ì ) s Collector Current I C (mA) 10 tr 10 tf 1 Test Circuit 0.1 Input 1 0.01 Output 10% 0.1 0.1 1.0 2.0 0.001 0.1 1 10 100 90% tr ...

Link URL