Maker : Infineon Technologies
Part No. : K10T60

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Product Information

TrenchStop® Series IKP10N60T p Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply ® TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 10A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking Code K10T60 Package G E PG-TO-220-3-1 Type IKP10N60T PG-TO-220-3-1 Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 175°C Diode forward current, limited by Tjmax TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time 2) Symbol VCE IC Value 600 20 10 30 30 20 10 30 ±20 5 110 -40...+175 -55...+175 260 Unit V A ICpul s IF IFpul s VGE tSC Ptot Tj Tstg V µs W °C VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, wavesoldering, 1.6 mm (0.063 in.) from case for 10s 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.2 May 06 www.DataSheet4U.net Power Semiconductors TrenchStop® Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A VCE(sat) V G E = 15 V , I C = 10 A T j =2 5 °C T j =1 7 5° C Diode forward voltage VF V G E = 0V , I F = 1 0 A T j =2 5 °C T j =1 7 5° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 3m A, V C E = V G E V C E = 60 0 V , V G E = 0V T j =2 5 °C T j =1 7 5° C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Ciss Coss Crss QGate V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =F eh le r ! V erw e is q u el le ko n n t e n i ch t g ef u n d e n w erd en. A V G E = 15 V IGES gfs RGint V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 10 A 4.1 600 Symbol Conditions RthJA RthJCD RthJC Symbol Conditions IKP10N60T p Max. Value 1.35 1.9 62 Unit K/W Value min. typ. 1.5 1.8 1.6 1.6 4.6 max. 2.05 2.0 5.7 Unit V µA 6 none 40 1000 100 nA S Ω 551 40 17 62 - pF nC Power Semiconductors 2 Rev. 2.2 May 06 TrenchStop® Series Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) IKP10N60T p 7 100 nH A - LE IC(SC) V G E = 15 V ,t S C ≤ 5 µs V C C = 4 0 0 V, T j = 25 ° C Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm d i r r /d...

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