Maker : Renesas Technology
Part No. : K1169

  Datasheet PDF : K1169.pdf
  Cross Reference : K1169 Cross Reference
  Buy Component : K1169 Find Stock and Price

Shortcut : K1160AA  K1169 

Product Information

www.DataSheet4U.com 2SK1169, 2SK1170 Silicon N Channel MOS FET REJ03G0916-0200 (Previous: ADE-208-1254) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 S 3 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1169, 2SK1170 www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2SK1169 2SK1170 VGSS ID ID(pulse)* IDR 2 Pch* Tch Tstg 1 Symbol VDSS Ratings 450 500 ±30 20 80 20 120 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage 2SK1169 2SK1170 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 450 500 ±30 — — 2.0 — — 10 — — — — — — — — — Typ — — — — — 0.20 0.22 16 2800 780 90 32 115 200 90 1.0 500 Max — — ±10 250 3.0 0.25 0.27 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V 3 ID = 10 A, VGS = 10 V * ID = 10 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz ID = 10 A, VGS = 10 V, RL = 3 Ω 3 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain 2SK1169 current 2SK1170 Gate to source cutoff voltage Static drain to source on 2SK1169 state resistance 2SK1170 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test IF = 20 A, VGS = 0 IF = 20 A, VGS = 0, diF/dt = 100 A/µs Rev.2.00 Sep 07, 2005 page 2 of 6 2SK1169, 2SK1170 www.DataSheet4U.com Main Characteristics Power vs. Temperature Derating 100 150 30 Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 10 D C PW 10 0 µs µs 10 3 1.0 1 = 10 m s C 100 m (1 O s pe ra tio n (T Sh = 50 Operation in this area is limited by RDS (on) 0.3 0.1 Ta = 25°C 1 3 10 ot ) 25 °C ) 2SK1170 2SK1169 30 100 300 1,000 0 50 100 150 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 20 7V 6V Typical Transfer Characteristics VDS = 20 V Pulse Test Drain Current ID (A) 30 Pulse Test Drain Current ID (A) 40 16 12 20 5V 8 4 75°C –25°C TC = 25°C 10 VGS = 4 V 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 10 Pulse Test Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 8 Static Drain to Source on State Resistance RDS (on) (Ω) 2 1.0 0.5 6 20 A 4 10 A ID = 5 A 0 4 8 12 16 20 VGS = 10 V 15 V 0.2 0.1 0.05 1 2 5 10 20 2 50 100 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 6 2SK1169, 2SK1170 www.DataSheet4U.com Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 1.0 VGS = 10 V Pulse Test 50 VDS = 20 V Pulse Test –25°C TC = 25°C 75°C 0.8 20 10 5 2 1.0 0.5 0.2 0.6 ID = 20 A 0.4 10 A 5A 0.2 0 –40 0 40 80 120 160 0.5 1.0 2 5 10 20 Case Temperature TC (°C) Drain Current ID (A) Body to...

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