Maker : Hitachi Semiconductor
Part No. : K1170

  Datasheet PDF : K1170.pdf
  Cross Reference : K1170 Cross Reference
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Shortcut : K117  K1170 

Product Information

www.DataSheet4U.com 2SK1169, 2SK1170 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1169, 2SK1170 www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1169 2SK1170 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 20 80 20 120 150 –55 to +150 Unit V V A A A W °C °C 2 www.DataSheet4U.com 2SK1169, 2SK1170 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1169 V(BR)DSS 2SK1170 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 — — — — — — — — — — 0.20 0.22 16 2800 780 90 32 115 200 90 1.0 500 3.0 0.25 0.27 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0, diF/dt = 100 A/µs I D = 10 A, VGS = 10 V, RL = 3 Ω I D = 10 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 10 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1169 I DSS 2SK1170 Gate to source cutoff voltage Static Drain to source 2SK1169 RDS(on) on state resistance 2SK1170 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test 3 2SK1169, 2SK1170 www.DataSheet4U.com Power vs. Temperature Derating 100 150 Channel Dissipation Pch (W) 30 Drain Current ID (A) 10 3 1.0 Operation in this area is limited by RDS (on) 0.3 0 50 100 Case Temperature TC (°C) 150 0.1 1 Ta = 25°C D C PW Maximum Safe Operation Area 10 1 = 10 m s C 10 0 µs µs 100 m (1 O s pe ra tio n (T Sh 50 = ot ) 25 °C ) 2SK1170 2SK1169 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 50 20 10 V 7V 6V 16 Pulse Test Drain Current ID (A) Typical Transfer Characteristics VDS = 20 V Pulse Test 40 Drain Current ID (A) 30 12 20 5V 8 4 75°C –25°C TC = 25°C 10 VGS = 4 V 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 0 2 4 6 8 10 Gate to Source Voltage VGS (V) 4 www.DataSheet4U.com Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance RDS (on) (Ω) 10 Drain to Source Saturation Voltage VDS (on) (V) Pulse Test 5 Pulse Test 2SK1169, 2SK1170 Static Drain to Source on State Resistance vs. Drain Current 8 2 1.0 0.5 6 20 A 4 10 A ID = 5 A 0 4 8 12 16 20 VGS = 10 V 15 V 0.2 0.1 0.05 1 2 5 10 20 Drain Current ID (A) 2 50 100 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance yfs (S) 1.0 VGS = 10 V Pulse Test 50 Forward Transfer Admittance vs. Drain Current 0.8 20 10 5 2 1.0 0.5 0.2 VDS = 20 V Pulse Test –25°C TC = 25°C 75°C 0.6 ID = 20 A 0.4 10 A 5A 0.2 0 –40 0 40 80 120 Case Temperature TC (°C) 160 0.5 1.0 5 2 Drain Current ID (A) 10 20 5 2SK1169, 2SK1170 www.DataSheet4U.com Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage...

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