Maker : Renesas Technology
Part No. : K1304

  Datasheet PDF : K1304.pdf
  Cross Reference : K1304 Cross Reference
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Shortcut : K1300  K1300E70  K1300G  K1300S  K1304  K1307 

Product Information

www.DataSheet4U.com 2SK1304 Silicon N Channel MOS FET REJ03G0923-0200 (Previous: ADE-208-1262) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive • • • • Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source 1 S 2 3 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1304 www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch *1 Ratings 100 ±20 40 160 40 100 150 –55 to +150 Unit V V A A A W *2 Tstg °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 100 ±20 — — 1.0 — — 22 — — — — — — — — — Typ — — — — — 0.025 0.03 35 3500 1400 340 25 170 730 300 1.2 300 Max — — ±10 250 2.0 0.03 0.04 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns IF = 40 A, VGS = 0 IF = 40 A, VGS = 0, diF/dt = 50 A/µs Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 10 V * 3 ID = 20 A, VGS = 4 V * ID = 20 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz ID = 20 A, VGS = 10 V, RL = 1.5 Ω 3 3 Rev.2.00 Sep 07, 2005 page 2 of 6 2SK1304 www.DataSheet4U.com Main Characteristics Power vs. Temperature Derating 120 500 200 Maximum Safe Operation Area Operation in this Area is Limited by RDS (on) Channel Dissipation Pch (W) Drain Current ID (A) 100 50 10 D C 10 80 PW O pe 0 1 = 10 n m µs µs 20 10 5 2 1.0 0.5 s ra m (T tio s (1 = 40 C Sh o 25 t) ) Ta = 25°C °C 0 50 100 150 1 3 10 30 100 300 1,000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 100 10 V 5V 7V 4V Pulse Test 50 Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current ID (A) 60 3.5 V 40 3V 20 VGS = 2.5 V Drain Current ID (A) 80 40 30 20 75°C 10 TC = 25°C –25°C 0 4 8 12 16 20 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 2.0 Pulse Test 50 A 1.2 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 0.05 VGS = 4 V 10 V 0.02 0.01 0.005 2 5 10 20 50 100 200 Drain to Source Saturation Voltage VDS (on) (V) 1.6 0.8 20 A 0.4 ID = 10 A 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 6 2SK1304 www.DataSheet4U.com Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test ID = 50 A 0.06 VGS = 4 V 20 A 10 A 0.04 50 A 20 A 10 A VGS = 10 V Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 50 0.08 20 10 5 –25°C TC = 25°C 75°C 2 1.0 0.02 VGS = 10 V Pulse Test 0 –40 0 40 80 120 160 0.5 1.0 2 5 10 20 50 Case Temperature TC (°C) Body to D...

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