Maker : Hitachi Semiconductor
Part No. : K1329

  Datasheet PDF : K1329.pdf
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Product Information

2SK1328, 2SK1329 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1328, 2SK1329 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1328 2SK1329 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature www.DataSheet4U.com Symbol VDSS Ratings 450 500 ±30 12 Unit V VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 V A A A W °C °C 48 12 60 150 –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2 2SK1328, 2SK1329 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1328 V(BR)DSS 2SK1329 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 6.0 — — — — — — — — — — 0.40 0.45 10 1450 410 55 20 70 120 60 1.0 450 3.0 0.55 0.60 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 12 A, VGS = 0 I F = 12 A, VGS = 0, diF/dt = 100 A/µs I D = 6 A, VGS = 10 V, RL = 5 Ω I D = 6 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 6 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1328 I DSS 2SK1329 Gate to source cutoff voltage www.DataSheet4U.com on state resistance Static Drain to source 2SK1328 RDS(on) 2SK1329 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test See characteristic curves of 2SK1165, 2SK1166. 3 2SK1328, 2SK1329 Power vs. Temperature Derating 120 Channel Dissipation Pch (W) 100 30 Drain Current ID (A) 80 10 3 1.0 0.3 Ta = 25°C 0.1 0 50 100 www.DataSheet4U.com Case Temperature TC (°C) 150 1 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) D C 1 10 10 0 µs Maximum Safe Operation Area µs PW = pe O m s 10 m s n tio ra (1 Sh 40 (T Operation in this Area is Limited by RDS (on) C ) ot °C ) = 25 2SK1329 2SK1328 Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 1 1.0 TC = 25°C θch–c (t) = γ S (t) · θch–c θch–c = 2.08°C/W, TC = 25°C PDM l t Pu Sho se 0.03 0.01 10 µ T 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 100 µ 10 4 Unit: mm 5.0 ± 0.3 15.6 ± 0.3 φ3.2 + 0.4 – 0.2 5.5 ± 0.3 www.DataSheet4U.com 2.7 1.0 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 21.0 ± 0.5 4.0 2.6 1.4 Max 5.0 19.9 ± 0.3 3.2 1.6 1.4 Max 0.6 ± 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PFM — — 5.6 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in ...

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