Maker : Hitachi Semiconductor
Part No. : K1342

  Datasheet PDF : K1342.pdf
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Shortcut : K1342 

Product Information

2SK1342 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1342 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% www.DataSheet4U.com 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 ±30 8 20 8 100 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1342 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 900 ±30 — — 2.0 — 3.5 — — — — — — — — — Typ — — — — — 1.2 5.5 1730 700 310 25 135 185 130 0.9 900 Max — — ±10 250 3.0 1.6 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 8 A, VGS = 0 I F = 8 A, VGS = 0, diF/dt = 100 A/µs I D = 4 A, VGS = 10 V, RL = 7.5 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 720 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V *1 I D = 4 A, VDS = 20 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance www.DataSheet4U.com Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1342 Power vs. Temperature Derating 150 Channel Dissipation Pch (W) 50 20 Drain Current ID (A) 10 5 2 1 0.5 0.2 0.1 0.05 0 www.DataSheet4U.com 50 100 Case Temperature TC (°C) 150 1 10 100 300 1,000 3 30 Drain to Source Voltage VDS (V) Ta = 25°C ea ar ) is th S (on in R D n tio by ra ted e i Op lim is Maximum Safe Operation Area 10 10 0 µs µs 100 1 ) ) ot C Sh 5° (1 = 2 s m (T C n 10 = atio r PW pe O C D m s 50 Typical Output Characteristics 10 10 V 8 Drain Current ID (A) 5V 6 6V Pulse Test Drain Current ID (A) 10 Typical Transfer Characteristics 8 VDS = 20 V Pulse Test 6 4 4.5 V 4 75°C TC = 25°C 2 VGS = 4 V 2 –25°C 0 10 30 40 20 Drain to Source Voltage VDS (V) 50 0 2 6 8 4 Gate to Source Voltage VGS (V) 10 4 2SK1342 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Pulse Test 16 ID = 10 A 12 Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (Ω) 5 VGS = 10 V 2 1 0.5 0.2 0.1 0.05 0.2 Pulse Test 15 V 8 5A 4 2A 8 0 12 16 www.DataSheet4U.com 4 Gate to Source Voltage VGS (V) 20 0.5 1.0 5 2 Drain Current ID (A) 10 20 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance yfs (S) 5 VGS = 10 V Pulse Test 5A ID = 10 A 2 2A 1 10 5 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test –25°C TC = 25°C 75°C 4 3 2 1 0.5 0.2 0.1 0.05 0 –40 0 80 120 40 Case Temperature TC (°C) 160 0.1 2 0.2 0.5 1 Drain Current ID (A) 5 5 2SK1342 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time t rr (ns) di/dt = 100 A/µs, Ta = 25°C, VGS = 0 Pulse Test Capacitance C (pF) 1,000 Coss 100 VGS = 0 f = 1 MHz 10 0.5 2 0.2 1 5 Reverse Drain Current IDR (A) 10 0 10 30 40 20 50 Drain to Source Voltage VDS (V) Crss 10,000 Typical Capacitance vs. Drain to Source Voltage 2,000 1,000 500 Ciss 200 100 50 0.1 ww...

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