Maker : Toshiba Semiconductor
Part No. : K1381

  Datasheet PDF : K1381.pdf
  Cross Reference : K1381 Cross Reference
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Product Information

2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII) 2SK1381 Relay Drive, Motor Drive and DC−DC Converter Applications 4 V gate drive Low drain−source ON resistance High forward transfer admittance Low www.DataSheet4U.com leakage current Enhancement−mode : RDS (ON) = 25 mΩ (typ.) : |Yfs| = 33 S (typ.) : IDSS = 100 µA (max) (VDS = 100 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 100 100 ±20 50 200 150 150 −55~150 Unit V V V A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-16C1B Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.833 50 Unit °C / W °C / W Weight: 4.6 g (typ.) Note 1: Please use devices on condition that the channel temperature is below 150°C. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-09-02 2SK1381 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance www.DataSheet4U.com Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time tf toff Qg Qgs Qgd VDD ≈ 80 V, VGS = 10 V, ID = 50 A — 60 — Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±20 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 25 A VGS = 10 V, ID = 25 A VDS = 10 V, ID = 25 A Min — — 100 0.8 — — 20 — — — — — Typ. — — — — 31 25 33 3700 580 1500 16 46 Max ±50 100 — 2.0 46 32 — — — — — — ns pF Unit nA µA V V mΩ S Turn−off time Total gate charge (Gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) charge — — — — 185 88 62 26 — — — — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovered charge Symbol IDR IDRP VDSF trr Qrr Test Condition — — IDR = 50 A, VGS = 0 V IDR = 50 A, VGS = 0 V dIDR / dt = 50 A / µs Min — — — — — Typ. — — — 280 0.56 Max 50 200 −1.6 — — Unit A A V ns µC Marking K1381 ※ Type ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) 2 2002-09-02 2SK1381 www.DataSheet4U.com 3 2002-09-02 2SK1381 www.DataSheet4U.com 4 2002-09-02 2SK1381 www.DataSheet4U.com 5 2002-09-02 2SK1381 www.DataSheet4U.com RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • ...

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