Maker : Hitachi Semiconductor
Part No. : K1567

  Datasheet PDF : K1567.pdf
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Product Information

2SK1566, 2SK1567 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1566, 2SK1567 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1566 2SK1567 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature www.DataSheet4U.com Symbol VDSS Ratings 450 500 ±30 7 Unit V VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 V A A A W °C °C 28 7 35 150 –55 to +150 Note 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2 2SK1566, 2SK1567 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1566 V(BR)DSS 2SK1567 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 4.0 — — — — — — — — — — 0.6 0.7 6.5 1050 280 40 15 55 95 40 0.95 320 3.0 0.8 0.9 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 7 A, VGS = 0 I F = 7 A, VGS = 0, diF/dt = 100 A/µs I D = 4 A, VGS = 10 V, RL = 7.5 Ω I D = 4 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V Ω I D = 1 mA, VDS = 10 V I D = 4 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1566 I DSS 2SK1567 Gate to source cutoff voltage www.DataSheet4U.com on state resistance Static Drain to source 2SK1566 RDS(on) 2SK1567 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test See characteristic curves of 2SK1157, 2SK1158. 3 2SK1566, 2SK1567 Maximum Safe Operation Area 50 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Drain Current ID (A) 20 10 5 2 1 0.5 0.2 0.1 0.05 0 www.DataSheet4U.com 50 100 Case Temperature TC (°C) 150 1 Operation in this Area is Limited by RDS (on) 10 10 D PW 0 µs C = 1 10 m m s µs 40 O s Sh pe ra tio n (1 (T C = ot ) 20 25 °C ) Ta = 25°C 2SK1567 2SK1566 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 θch–c (t) = γ S (t) · θch–c θch–c = 3.57°C/W, TC = 25°C PDM D = PW T TC = 25°C 1.0 0.03 0.01 10 µ 1S ho lse t Pu 100 µ 1m 10 m 100 m Pulse Width PW (s) T PW 1 10 4 10.0 ± 0.3 7.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 Unit: mm 0.6 5.0 ± 0.3 2.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 12.0 ± 0.3 4.45 ± 0.3 2.5 14.0 ± 1.0 0.5 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220FM — Conforms 1.8 g 0.7 ± 0.1 2.54 ± 0.5 www.DataSheet4U.com 2.54 ± 0.5 17.0 ± 0.3 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact ...

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