Maker : Toshiba
Part No. : K15H50C

  Datasheet PDF : K15H50C.pdf
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Product Information

TK15H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK15H50C ○ Switching Regulator Applications • • • • Low drain−source ON resistance Low leakage current Enhancement mode : RDS (ON) = 0. 33 Ω (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, I45D = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 15 60 150 765 15 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) 1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE JEDEC JEITA TOSHIBA Weight: 3.8 g (typ.) ― ― Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) www.DataSheet4U.com Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 0.833 50 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.78 mH, RG = 25 Ω, IAR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 1 2006-11-06 TK15H50C Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Gate−source breakdown voltage Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 15 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 µA, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 7.0 A VDS = 10 V, ID = 7.0 A Min — ±30 — 500 2.0 — 4.0 — — — — Typ. — — — — — 0.33 8.5 2450 15 220 50 Max ±10 — 100 — 4.0 0.4 — — — — — pF Unit µA V µA V V Ω S Turn-on time Switching time Fall time — 90 — ns — 45 — Turn-off time Total gate charge (gate−source plus gate−drain) Gate−source charge www.DataSheet4U.com — — — — 175 48 26 22 — — — — nC Gate−drain (“Miller”) charge Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition — — IDR = 15 A, VGS = 0 V IDR = 15 A, VGS = 0 V dIDR / dt = 100 A / µs Min — — — — — Typ. — — — 1050 13 Max 15 60 −1.7 — — Unit A A V ns µC Marking TOSHIBA TK15H50C Part No. (or abbreviation code) Lot No. A line indicates a lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 TK15H50C ID – VDS 10 Common source Tc = 25°C Pulse test 10 8 6 20 10 ID – VDS Common source Tc = 25°C Pulse test Drain current ID (A) 6 5.25 4 5 2 4.75 4.5 VGS = 4 V 0 0 1 2 3 4 5 Drain curren...

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