Maker : Infineon Technologies
Part No. : K15N120

  Datasheet PDF : K15N120.pdf
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Shortcut : K15N120 

Product Information

SKW15N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW15N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C 2 C G E PG-TO-247-3 VCE 1200V IC 15A Eoff 1.5mJ Tj 150°C Marking K15N120 Package PG-TO-247-3 Symbol VCE IC Value 1200 30 15 Unit V A ICpuls IF 52 52 32 15 IFpuls VGE tSC Ptot 50 ±20 10 198 V µs W VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2_2 Sep 08 Power Semiconductors SKW15N120 www.DataSheet4U.com Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V(BR)CES VGE=0V, I C =1 000 µA VCE(sat) V G E = 15 V, I C =15A T j = 25°C T j = 150 °C Diode forward voltage VF VGE=0V, IF=15A T j = 25°C T j = 150 °C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =600 µA,V C E =V G E V C E =1200V,V G E =0V T j = 25°C T j = 150 °C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E =15V,t S C ≤1 0 µs 1 00 V≤ V C C ≤1 200 V, T j ≤ 150 °C 145 A Ciss Coss Crss QGate LE V C E =25V, VGE=0V, f=1MHz V C C = 96 0 V, I C =15A V G E =15V 13 nH 1250 155 65 130 1500 185 80 175 nC pF IGES gfs V C E =0V,V G E =20V V C E =20V, I C =15A 11 200 800 100 nA S 3 2.0 1.75 4 5 µA 2.5 2.5 3.1 3.7 3.6 4.3 1200 V Symbol Conditions Value min. typ. max. Unit RthJA 40 RthJCD 1.5 RthJC 0.63 K/W Symbol Conditions Max. Value Unit 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2_2 Sep 08 Power Semiconductors SKW15N120 www.DataSheet4U.com Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t F Qrr Irrm dirr/dt T j = 25°C , V R = 80 0 V , I F =15A, d i F /d t= 650A/µs 0.5 15 500 µC A A/µs 65 ns td(on) tr td(off) tf Eon Eoff Ets T j = 25°C , V C C = 80 0 V, I C =15A, V G E =15V/0V, R G = 3 3Ω , L σ 1 ) =1 80nH, C σ 1 ) =40pF Energy losses include “tail” and diode reverse recovery. 18 23 580 22 1.1 0.8 1.9 24 30 750 29 1.5 1.1 2.6 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time T...

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