Maker : Infineon
Part No. : K15N60

  Datasheet PDF : K15N60.pdf
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Product Information

SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: www.DataSheet4U.com- very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability (TO-220AB) • Very soft, fast recovery anti-parallel EmCon diode • Pb-free lead plating; RoHS compliant 1 • Qualified according to JEDEC for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKP15N60 SKW15N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C °C 2 C G E PG-TO-247-3-21 (TO-247AC) VCE 600V 600V IC 15A 15A VCE(sat) 2.3V 2.3V Tj 150°C 150°C Marking Package K15N60 PG-TO-220-3-1 K15N60 PG-TO-247-3-21 Symbol VCE IC Value 600 31 15 Unit V A ICpul s IF 62 62 31 15 IFpul s VGE tSC Ptot 62 ±20 10 139 V µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2_1 Apr 06 SKP15N60 SKW15N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal www.DataSheet4U.com resistance, RthJA PG-TO-220-3-1 PG-TO-247-3-1 62 40 junction – ambient RthJCD 1.7 RthJC 0.9 K/W Symbol Conditions Max. Value Unit Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µA VCE(sat) V G E = 15 V , I C = 15 A T j =2 5 °C T j =1 5 0° C Diode forward voltage VF V G E = 0V , I F = 1 5 A T j =2 5 °C T j =1 5 0° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 40 0 µA , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 °C T j =1 5 0° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 600 1.7 1.2 3 3 Typ. 2 2.3 1.4 1.25 4 10.9 800 84 52 76 7 13 150 max. 2.4 2.8 1.8 1.65 5 Unit V µA 40 2000 100 960 101 62 99 A nC nH nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 15 A V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =1 5 A V G E = 15 V PG-TO-220-3-1 PG-TO-247-3-21 V G E = 15 V ,t S C ≤ 10 µs V C C ≤ 6 0 0 V, T j ≤ 1 5 0° C 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2_1 Apr 06 SKP15N60 SKW15N60 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time www.DataSheet4U.com Symbol Conditions Value min. typ. 32 23 234 46 0.30 0.27 0.57 279 28 254 390 5.0 180 max. 38 28 281 55 0.36 0.35 0.71 - Unit td(on) tr td(off) tf Eon Eoff Ets trr tS tF Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time T j =2 5 °C , V C C = 40 0 V, I C = 1 5 A, V G E = 0/ 15 V , R G = 21 Ω, 1) L σ = 18 0 nH , 1) C σ = 25 0 pF Energy losses include “tail” and diode reverse recovery. T j =2 5 °C , V R = 2 0...

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