Maker : Renesas Technology
Part No. : K1637

  Datasheet PDF : K1637.pdf
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Product Information

www.DataSheet4U.net 2SK1637 Silicon N Channel MOS FET REJ03G0962-0200 (Previous: ADE-208-1305) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 6 www.DataSheet4U.net 2SK1637 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch *1 Ratings 600 ±30 4 16 4 35 150 –55 to +150 Unit V V A A A W *2 Tstg °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 600 ±30 — — 2.0 — 2.2 — — — — — — — — — Typ — — — — — 1.8 3.5 600 140 25 8 30 60 35 0.9 300 Max — — ±10 250 3.0 2.4 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 10 V * ID = 2 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz ID = 2 A, VGS = 10 V, RL = 15 Ω 3 3 IF = 4 A, VGS = 0 IF = 4 A, VGS = 0, diF/dt = 100 A/µs Rev.2.00 Sep 07, 2005 page 2 of 6 www.DataSheet4U.net 2SK1637 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 50 30 Pch (W) 60 Drain Current ID (A) O is per lim at ite ion d in by th R is D ar S e (o a n) 10 3 1 0.3 0.1 10 Channel Dissipation 40 µs 0 10 DC O PW ra pe 20 Ta =25°C 1 10 ms m tio s n (T (1 S ho C = 25 t) °C ) = 100 300 1,000 µs 0 50 100 150 0.05 1 3 10 30 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 5 10 V 6V 5V Pulse Test 5 Typical Transfer Characteristics VDS = 20 V Pulse Test Drain Current ID (A) 3 4.5 V Drain Current ID (A) 4 4 3 2 4V VGS = 3.5 V 0 10 20 30 40 50 2 1 1 TC = –25°C 25°C 75°C 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Pulse Test 16 ID = 5 A 12 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 50 Pulse Test 20 10 5 2 1 0.5 0.2 VGS = 10 V 15 V Drain to Source Saturation Voltage VDS (on) (V) 8 2A 1A 0 4 8 12 16 20 4 Static Drain to Source on State Resistance RDS (on) (Ω) 0.5 1 2 5 10 20 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 6 www.DataSheet4U.net 2SK1637 Static Drain to Source on State Resistance vs. Temperature 10 VGS = 10 V Pulse Test Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 10 VDS = 20 V Pulse Test 5 2 1 0.5 TC = –25°C 25°C 75°C 8 6 ID = 5 A 2A 4 1A 2 0.2 0.1 0.05 0 –40 0 40 80 120 160 0.1 0.2 0.5 1 2 5 Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time 1,000 1,000 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Ciss Reverse Recovery Time trr (ns) 500 200 100 50 20 di/dt = 100 A/µs, VGS = 0 Ta = 2...

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