Maker : Sanyo Semicon Device
Part No. : K3850

  Datasheet PDF : K3850.pdf
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Product Information

Ordering number : ENN8193 2SK3850 www.datasheet4u.com N-Channel Silicon MOSFET 2SK3850 Features • • • General-Purpose Switching Device Applications Best suited for motor drive. Low ON-resistance. Low Qg. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 600 ±30 0.7 2.8 1.0 15 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=600V, VGS=0 VGS=±30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=0.35A VGS=10V, ID=0.35A VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 600 100 ±100 2.5 280 560 14 96 29 16 18.5 3.5 typ max Unit V µA nA V mS Ω pF pF pF Marking :K3850 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31005PB TS IM TA-101202 No.8193-1/4 2SK3850 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=0.7A IS=0.7A, VGS=0 Ratings min typ 9 11 16 50 4 0.89 1.2 max Unit ns ns ns ns nC V www.datasheet4u.com Package Dimensions unit : mm 2083B 6.5 5.0 4 1.5 2.3 Package Dimensions unit : mm 2092B 0.5 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.8 1.6 0.6 1 2 3 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP 1 0.6 7.5 0.8 2 3 2.5 1.2 0.85 0.5 1.2 0.85 0.7 5.5 7.0 1.2 0 to 0.2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA 2.3 2.3 2.3 2.3 Switching Time Test Circuit VIN 10V 0V VIN ID=0.35A RL=571Ω VDD=200V D PW=1µs D.C.≤0.5% VOUT G 2SK3850 P.G RGS 50Ω S No.8193-2/4 2SK3850 Tc= --25°C 0.50 0.45 0.40 ID -- VDS 8V 10 V 0.50 ID -- VGS VDS=10V C 75° Drain Current, ID -- A Drain Current, ID -- A 6V 0.35 0.30 0.35 0.30 0.25 0.20 0.25 www.datasheet4u.com 0.20 0.15 0.10 0.05 0 0 1 2 3 4 5 6 7 8 9 10 C 0.15 0.10 0.05 0 0 1 2 3 Tc=7 5° VGS=4V 4 25°C 5 --25°C 25 6 0.40 °C 5V 0.45 7 IT08303 Drain-to-Source Voltage, VDS -- V 30 IT08302 30 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Tc=25°C ID=0.35A 25 25 20 20 15 .3 =0 ID 5A ,V =1 GS 0V 15 10 10 5 5 2 4 6 8 10 12 14 16 IT09151 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 1.0 yfs -- ID Case Temperature, Tc -- °C 1.0 IT09152 ...

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