Maker : Samsung
Part No. : K9GAG08U0M

Datasheet PDF : K9GAG08U0M.pdf
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K9GAG08B0M K9GAG08U0M K9LBG08U1M Preliminary FLASH MEMORY K9XXG08UXM www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. 1 K9GAG08B0M K9GAG08U0M K9LBG08U1M Document Title 2G x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 Preliminary FLASH MEMORY History 1. Initial issue 1. Add read status 2 command F1h 2. Add 2-plane read operation 3. Add address map (Table2) 4. Remove adjacent page relationship table 5. Modify figure of 2-plane copy-back program with random data input 6. Modify figure of Rp vs tr ,tf & Rp vs ibusy 7. Data retention 5years -> 10 years 8. Remove K9LBG08U1M 9. Modify figure of 2-plane page program 10. Add nWP timing guide 11. Add 2-plane read for copy-back operation 12. Add 2-plane random data out operation 13. Modify command table and note 14. Modify invalid block definition 15. Add program operation with 2KB data loading timing guide 16. tRLOH is valid when frequency is higher than 20MHz. tRHOH starts to be valid when frequency is lower than 20MHz. -> tRLOH is valid when frequency is higher than 33MHz. tRHOH starts to be valid when frequency is lower than 33MHz. 1. Add 2.7V part 2. tCDS is added. (min. 10ns) 1. Endurance is changed (10K->5K) Draft Date Remark April 12th 2006 Advance Sep. 21th 2006 Advance www.DataSheet4U.com 0.2 Dec. 8th 2006 Advance 0.3 0.4 0.5 0.6 Dec. 12th 2006 Dec. 21st 2006 Advance Preliminary Preliminary Preliminary 1. Endurance is changed (5K -> TBD) 1. K9GAG08U0M-I/K9LBG08U0M-I is added. 2. Random data output for copy back is added. 3. Wafer level capacitance is added. Jan. 12th 2007 Feb. 12th 2007 The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. 2 K9GAG08B0M K9GAG08U0M K9LBG08U1M 2G x 8 Bit NAND Flash Memory PRODUCT LIST Part Number K9GAG08U0M-P K9GAG08B0M-P K9GAG08U0M-I K9LBG08U1M-I Vcc Range 2.7V ~ 3.6V 2.5V ~ 2.9V 2.7V ~ 3.6V X8 Organization Preliminary FLASH MEMORY PKG Type TSOP1 52ULGA FEATURES • Voltage Supply - 2.7V Device(K9F8G08B0M) : 2.5V ~ 2.9V www.DataSheet4U.com - 3.3V Device(K9F8G08U0M) : 2.7V ~ 3.6V • Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit • Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (512K + 16K)Byte • Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 60µs(Max.) - Serial Access : 25ns(Min.) • Memory Cell : 2bit / Memory Cell • Fast Write Cycle Time - Program time : 800µs(Typ.) - Block Erase Time : 1.5ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : TBD(with 4bit/512byte ECC) - Data Retention : 10 Years • Command Register Operation • Unique ID for Copyright Protection • Package : - K9GAG08U0M-PCB0/PIB0 : Pb-FREE PACKAGE...

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