Maker : Samsung
Part No. : K9GAG08U0M

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Product Information

www.DataSheet4U.com K9LAG08U1M K9G8G08U0M Preliminary FLASH MEMORY K9XXG08UXM www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. 1 www.DataSheet4U.com K9LAG08U1M K9G8G08U0M Preliminary FLASH MEMORY Document Title 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark Advance Advance Advance www.DataSheet4U.com 0.2 1. Initial issue Feb. 1st 2005 1. Cycle time is changed from 35ns to 30ns Apr. 1st 2005 2. Technical note is changed. 1. AC Para. tRHW deleted Sept. 1. 2005 2. the power recovery time of minmum is changed from 10µs to 100µs(p38) 1. Leaded part is eliminated. 2. tR 50us -> 60us (p. 3,12,31) 3. tRHW, tCSD parameter is defined. 4. Technical note is added.(p.16) 1. Endurance is changed (10K->5K) 1. Max. tPROG is changed (2ms->3ms) 1. Address scramble is added (p.33) 2. Program/Erase Characteristics Note 3 is added(p.11) Mar. 20th. 2006 0.3 Advance 0.4 0.5 0.6 Apr. 20th 2006 Apr. 25th 2006 June 30th 2006 Advance Advance Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. 2 www.DataSheet4U.com K9LAG08U1M K9G8G08U0M Preliminary FLASH MEMORY 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory PRODUCT LIST Part Number K9G8G08U0M-P K9G8G08U0M-I K9LAG08U1M-I 2.7V ~ 3.6V X8 Vcc Range Organization PKG Type TSOP1 52ULGA www.DataSheet4U.com • Voltage Supply : 2.7 V ~ 3.6 V • Organization - Memory Cell Array : (1G + 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (256K + 8K)Byte • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 60µs(Max.) - Serial Access : 30ns(Min.) • Memory Cell : 2bit / Memory Cell FEATURES • Fast Write Cycle Time - Program time : 800µs(Typ.) - Block Erase Time : 1.5ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 5K Program/Erase Cycles(with 4bit/512byte ECC) - Data Retention : 10 Years • Command Register Operation • Unique ID for Copyright Protection • Package : - K9G8G08U0M-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9G8G08U0M-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch) - K9LAG08U1M-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch) GENERAL DESCRIPTION Offered in 1Gx8bit, the K9G8G08U0M is a 8G-bit NAND Flash Memory with spare 256M-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 2,112-byte page and an erase operation can be performed in typical 1.5ms on a (256K+8K)byte block. Data in the data register can be read out at 30ns cycle time per byte. The I/O pins serve as the po...

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