Maker : ETC
Part No. : L-51P3C

  Datasheet PDF : L-51P3C.pdf
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Product Information

PHOTOTRANSISTOR L-51P3C Features !MECHANICALLY AND SPECTRALLY MATCHED TO Description Made with NPN silicon phototransistor chips. THE L-53 SERIES INFRARED EMITTING LED LAMP. !WATER CLEAR LENS. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: KDA0531 APPROVED:J.LU REV NO: V.1 CHECKED: DATE: SEP/17/2001 DRAWN:X.Q.ZHENG PAGE: 1 OF 2 Absolute Maximum Rating at T)=25°C ° Par am et er Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Power Dissipation at (or below) 25°C Free Air Temperature Operating Temperature Range Storage Temperature Range Lead Soldering Temperature(4mm For 5sec) Max im u m Rat in g s 30V 5V 100mW -40°C ~ +85°C -40°C ~ +85°C 260°C ° Electrical And Radiant Characteristics at T)=25°C Sy m b o l V BR C EO V BR EC O VCE (SAT) ICEO TR TF Par am et er Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Collector-to-Emitter Saturation Voltage Collector Dark Current Rise Time (10% to 90%) Fall Time (90% to 10%) Min . 30 5 Ty p . 3 3 Max . 0.8 100 Un it V V V nA us us Tes t Co n d ic t io n I C=100uA Ee=0mW/cm2 I E=100uA Ee=0mW/cm2 I C=2mA Ee=20mW/cm2 VCE=10V Ee=0mW/cm2 VCE=5V IC=1mA RL=1KΩ I (ON) On State Collector Current 0.1 0.5 - mA VCE=5V, Ee=1mW/cm2, λ=940nm SPEC NO: KDA0531 APPROVED:J.LU REV NO: V.1 CHECKED: DATE: SEP/17/2001 DRAWN:X.Q.ZHENG PAGE: 2 OF 2 ...

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