Maker : IXYS Corporation
Part No. : L102

  Datasheet PDF : L102.pdf
  Cross Reference : L102 Cross Reference
  Buy Component : L102 Find Stock and Price

Shortcut : L1005  L1005A  L1006  L1007  L1008  L1009  L1010  L102  L1021  L1023  L1024  L1024A  L1025  L1026A  L1027  L103  L1030  L1031  L1031  L1040  L1040  L1041  L105  L1050  L1051  L1084  L1084-3.3  L1084S3  L1084S5  L1085  L1085-3.3  L1087  L1087-3.3  L1087C  L1087DTX-2.85  L1087DTX-3.3  L1087DTX-5.0  L1087DTX-ADJ  L1087MPX-2.85  L1087MPX-3.3  L1087MPX-5.0  L1087MPX-ADJ  L1087N-3.3  L108K  L10C11  L10C11JC15  L10C11JC20 

Product Information

MDD 312 High Power Diode Modules VRSM VDSM V 1300 1500 1700 1900 2100 2300 Symbol IFRMS IFAVM IFSM VRRM VDRM V 1200 1400 1600 1800 2000 2200 Type 3 1 2 IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V 3 2 MDD MDD MDD MDD MDD MDD 312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 Maximum Ratings 520 310 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 10500 11200 9200 9800 551000 527000 423 000 403 000 -40...+150 150 -40...+125 A A A A A A A2 s A2 s A2s A2s °C °C °C V~ V~ 1 Conditions TVJ = TVJM TC = 100°C; 180° sine TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 Features • International standard package • Direct copper bonded Al2O3-ceramic with copper base plate • Planar passivated chips • Isolation voltage 3600 V~ • UL registered E 72873 Applications • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery DC power supplies Advantages • Simple mounting • Improved temperature and power cycling • Reduced protection circuits Dimensions in mm (1 mm = 0.0394") M8x20 ∫i2dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 TVJ TVJM Tstg VISOL Md Weight Symbol IRRM VF VT0 rT RthJC RthJK QS IRM dS dA a 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 3000 3600 Mounting torque (M6) Terminal connection torque (M8) Typical including screws Conditions TVJ = TVJM; VR = VRRM IF = 600 A; TVJ = 25°C For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module TVJ = 125°C; IF = 400 A; -di/dt = 50 A/µs Creeping distance on surface Creepage distance in air Maximum allowable acceleration 4.5-7/40-62 Nm/lb.in. 11-13/97-115 Nm/lb.in. 750 g Characteristic Values 30 1.32 0.8 0.6 0.12 0.06 0.16 0.08 700 260 12.7 9.6 50 mA V V mΩ K/W K/W K/W K/W µC A mm mm m/s2 Data according to IEC 60747 and refer to a single diode unless otherwise stated. 423 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 1-3 MDD 312 10000 106 It 2 IFSM VR = 0 V IFAVM A2s A 50 Hz 80 % VRRM TVJ = 45°C TVJ = 150°C 550 A 500 450 400 350 8000 DC 180° sin 120° 60° 30° 6000 TVJ = 45°C 4000 300 TVJ = 150°C 250 200 150 2000 100 50 0 0.001 10 0.01 0.1 5 0 1 t ms 10 0 25 50 75 100 TC s t 1 125 150 Fig. 1 Surge overload current IFSM: Crest value, t: duration 600 Ptot W 500 Fig. 2 I2t versus time (1-10 ms) 600 RthKA K/W Fig. 3 Maximum forward current at case temperature A TVJ = 125°C VR = 600 V 400 0.06 0.1 0.2 0.3 0.4 0.6 0.8 DC 180° sin 120° 60° 30° 500 IRM 400 300 IF = 400 A 300 200 200 100 0 0 50 100 A/µs 150 diF/dt 100 0 0 100 200 300 400 500 A 0 IFAVM 25 50 75 100 125 TA 150 200 Fig. 4 Power dissipation vs. forward current and ambient temperature (per diode) 1750 Ptot W 1500 R 1250 1000 750 500 250 0 0 100 200 300 400 500 600 A 0 IdAVM 25 50 75 100 125 TA 150 Circuit B2U 2 x MDD312 L Fig. 5 Typ. peak reverse current IRM versus -diF/dt 25 µs TVJ = 125°C VR = 600 V RthKA K/W 0.04 0.06 0.08 0.12 0.2 0.3 0.5 20 trr 15 IF = 400 A 10 5 0 0 50 100 A/µs 150 200 diF/dt Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature R = resistive load, L = inductive load IXYS reserves the right to change limits, test conditions and dimensions. Fig. 7 Typ. recovery time trr versus -diF/dt 423 2-3 © 2004 IXYS All rights reserved MDD 312 3000 W 2500 Ptot 2000 RthKA K/W 0.03 0.06 0.1 0.15 0.2 0.3 0.4 1500 Circuit B6U 3 x MDD312 1000 500 0 0 200 400 600 800 A IdAVM 0 25 50 75 100 125 TA 150 Fig. 8 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.20 K/W 0.15 ZthJC RthJC for various conduction angles d: d DC 180°C 120°C 60°C 30°C 30° 60° 120° 180° DC RthJC (K/W) 0.120 0.128 0.135 0.153 0.185 0.10 Constants for ZthJC calculation: i 1 2 3 4 101 t s 1...

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