Maker : ST Microelectronics
Part No. : LET9120M

  Datasheet PDF : LET9120M.pdf
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Shortcut : LET9120  LET9120M 

Product Information

LET9120M RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration push-pull POUT = 120 W with 18 dB gain @ 860 MHz Internal input matching BeO-free package Description The LET9120M is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. M252 Epoxy sealed Figure 1. Pin connection 1 2 3 5 www.DataSheet4U.com 4 1. Drain 2. Drain 3. Source 4. Gate 5. Gate Table 1. Device summary Order code LET9120M Package M252 Branding LET9120M November 2009 Doc ID 16762 Rev 1 1/8 www.st.com 8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents LET9120M Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 www.DataSheet4U.com 2/8 Doc ID 16762 Rev 1 LET9120M Electrical data 1 1.1 Electrical data Maximum ratings Table 2. Symbol V(BR)DSS VGS ID PDISS TJ TSTG Absolute maximum ratings (TCASE = 25 °C) Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ Tc = 70°C) Max. operating junction temperature Storage temperature Value 80 ± 20 18 217 200 -65 to +150 Unit V V A W °C °C 1.2 Thermal data Table 3. Symbol RthJC Thermal data Parameter Junction - case thermal resistance Value 0.6 Unit °C/W www.DataSheet4U.com Doc ID 16762 Rev 1 3/8 Electrical characteristics LET9120M 2 Electrical characteristics TCASE = +25 oC 2.1 Static Table 4. Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS COSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V Static (per section) Test conditions IDS = 1 mA VDS = 28 V VDS = 0 V ID = 100 mA ID = 3 A ID = 3 A VDS = 28 V f = 1 MHz 2.5 29 2.0 0.9 Min 80 1 1 5.0 1.2 Typ Max Unit V µA µA V V mho pF Note: Device is internally input matched. 2.2 Dynamic Table 5. Symbol POUT Dynamic Test conditions VDD = 32 V IDQ = 400 mA f = 860 MHz Min 120 16 50 18 65 Typ Max Unit W dB % www.DataSheet4U.com GPS η D VDD = 32 V IDQ = 400 mA POUT = 120 W f = 860 MHz VDD = 32 V IDQ = 400 mA POUT = 120 W f = 860 MHz 4/8 Doc ID 16762 Rev 1 LET9120M Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. www.DataSheet4U.com Doc ID 16762 Rev 1 5/8 Package mechanical data Table 6. Dim. Min A B C D E F G H I J K L M N 33.91 0.10 1.52 2.36 4.57 9.96 21.64 3.00 9.65 2.16 21.97 27.94 34.16 0.15 1.78 2.74 5.33 10.34 22.05 1.335 .004 .060 .093 .180 .392 .852 8.13 10.80 3.30 9.91 2.92 22.23 .118 .380 .085 .865 1.100 LET9120M M252 (.400 x .860 4L BAL N/HERM W/FLG) mechanical data mm. Typ Max 8.64 Min .320 .425 .130 .390 .115 .875 1.345 .006 .070 .108 .210 .407 .868 inch Typ Max .340 Figure 2. Pack...

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