Maker : National Semiconductor
Part No. : LM312H

  Datasheet PDF : LM312H.pdf
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Product Information

LM112 LM212 LM312 Operational Amplifiers September 1992 LM112 LM212 LM312 Operational Amplifiers General Description The LM112 series are micropower operational amplifiers with very low offset-voltage and input-current errors at least a factor of ten better than FET amplifiers over a b 55 C to a 125 C temperature range Similar to the LM108 series that also use supergain transistors they differ in that they include internal frequency compensation and have provisions for offset adjustment with a single potentiometer These amplifiers will operate on supply voltages of g 2V to g 20V drawing a quiescent current of only 300 mA Performance is not appreciably affected over this range of voltages so operation from unregulated power sources is easily accomplished They can also be run from a single supply like the 5V used for digital circuits The LM112 series are the first IC amplifiers to improve reliability by including overvoltage protection for the MOS compensation capacitor Without this feature IC’s have been known to suffer catastrophic failure caused by short-duration overvoltage spikes on the supplies Unlike other internally-compensated IC amplifiers it is possible to overcompensate with an external capacitor to increase stability margin The LM212 is identical to the LM112 except that the LM212 has its performance guaranteed over a b25 C to a 85 C temperature range instead of b55 C to a 125 C The LM312 is guaranteed over a 0 C to a 70 C temperature range Features Y Y Y Y Maximum input bias current of 3 nA over temperature Offset current less than 400 pA over temperature Low noise Guaranteed drift specifications Connection Diagram Metal Can Package TL H 7751 – 4 Top View Order Number LM112H LM212H LM312H or LM112H 883 See NS Package Number H08C Auxiliary Circuits Offset Balancing Overcompensation for Greater Stability Margin TL H 7751 – 2 TL H 7751 – 3 C1995 National Semiconductor Corporation TL H 7751 RRD-B30M115 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications (Note 5) LM112 LM212 LM312 g 20V g 18V Supply Voltage Power Dissipation (Note 1) 500 mW 500 mW g 10 mA g 10 mA Differential Input Current (Note 2) g 15V g 15V Input Voltage (Note 3) Output Short-Circuit Duration Continuous Continuous Operating Temperature Range b 55 C to a 125 C LM112 0 C to a 70 C b 25 C to a 85 C LM212 b 65 C to a 150 C b 65 C to a 150 C Storage Temperature Range 300 C Lead Temperature (Soldering 10 sec ) 300 C ESD rating to be determined Electrical Characteristics (Note 4) Parameter Input Offset Voltage Input Offset Current Input Bias Current Input Resistance Supply Current Large Signal Voltage Gain Input Offset Voltage Average Temperature Coefficient of Input Offset Voltage Input Offset Current Average Temperature Coefficient of Input Offset Current Input Bias Current Supply Current Large Signal Voltage Gain Output Voltage Swing Input Voltage Range Common-Mode Rejection Ratio Supply Voltage Rejection Ratio TA e 125 C VS e g 15V VOUT e g 10V RL t 10 kX VS e g 15V RL e 10 kX VS e g 15V 25 g 13 g 13 5 g 14 Conditions TA e 25 C TA e 25 C TA e 25 C TA e 25 C TA e 25 C TA e 25 C VS e g 15V VOUT e g 10V RL t 10 kX LM112 LM212 Min Typ 07 0 05 08 30 70 03 50 300 30 30 15 04 05 25 30 0 15 04 15 g 13 g 14 LM312 Max 20 02 20 10 06 25 Min Typ 20 02 15 40 03 300 10 60 30 15 20 10 10 08 Max 75 1 7 Units mV nA nA MX mA V mV mV mV C nA pA C nA mA V mV g 14 V V 85 80 100 96 80 80 100 96 dB dB Note 1 The maximum junction temperature of the LM112 is 150 C LM212 is 100 C and LM312 is 85 C For operating at elevated temperatures devices in the H08 package must be derated based on a thermal resistance of 160 C W junction to ambient or 20 C W junction to case Note 2 The inputs are shunted with shunt diodes for overvoltage protection Therefore excessive current will flow if a differential input v...

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